Results forsi doped gaas wafefrom 107 Products.
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VFG metod N-type 2inch/3inch,4inch ,6inch dia150mm GaAs Gallium Arsenide Wafers N-type Semi-insulating type for Microelectronics, --------------------------------------------------...
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N Type , Si-Doped GaAs(Gallium Arsenide) Substrate , 3”, Dummy Grade PAM-XIAMEN Develops and manufactures compound semiconductor substrates-gallium arsenide crystal and wafer. We ...
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VFG metod N-type 3inch,4inch ,6inch dia150mm GaAs Gallium Arsenide Wafers Semi-insulating type for Microelectronics, 2inch N-Type Si-Doped un-doped GaAas Wafer Gallium Arsenide ...
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2inch GaAs (100) Si-doped substrates Overview GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, ...
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TSAL4400 GaAs/GaAlAs IR Emitting Diode High Power Infrared Emitting Diode FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): ∅ 3 • Peak wavelength: λp = 940 ...
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Boron Doped Diamond CVD Bdd Electrodes For Coating The Si/Niobium Substrate Specification Product name Boron Doped Diamond CVD Bdd electrodes for coating the Si/Niobium substrate ...
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Polished surface Si silicon single crystal Black amorphous silicon is obtained by the reduction of sand (SiO2) with carbon. Ultra-pure crystals if silicon have a blue-grey metallic ...
china
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Product Features GaAs Active Devices Power Gain 25dB Low Distortion Excellent Linear Gain Low Noise Figure High Reliability Industry Compatible Package Product Description CGD825E ...
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TSAL4400 GaAs/GaAlAs IR Emitting Diode High Power Infrared Emitting Diode FEATURES • Package type: leaded • Package form: T-1 • Dimensions (in mm): ∅ 3 • Peak waveleCM GROUPh: λp = ...
china
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Infrared Silicon(Si) Lens Silicon (Si) is one of the hardest minerals and optical materials available for use in the NIR (1µm) to about 6µm. Optical quality Silicon is usually ...
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Description Cerium doped yttrium-aluminum garnet (Ce:YAG) is a well established scintillator and has many attractive properties, such as fast decay (60~70ns), high light yield, ...
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2 inch GaN Templates: Dimensions:Ф 50.8mm ± 0.1mm Thickness:4 µm, 20 µm; 4 µm Orientation:C-plane(0001) ± 0.5° Conduction Type:N-type(Undoped); N-type(Si-doped); P-type(Mg-doped) ...
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2inch GaAs (111) Si-doped substrates Overview Gallium in a GaAs Wafer is in general used in the production of semiconductors, barometers, light emitting diodes, thermometers and ...
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2inch/3inch /4inch /6inch S-C-N Type Si-doped Gallium arsenide GaAs Wafer Product Description (GaAs) Gallium Arsenide Wafers PWAM Develops and manufactures compound semiconductor ...
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2Inch Si Dopant GaAs Wafers Gallium Arsenide Substrates Double Side Polished For LED Application -----------------------------------------------------------------------------------...
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4 inch N-type Si-doped GaN on sapphire wafer SSP resistivity＜0.05 Ω cm LED, laser, PIN epitaxial wafer For lightly Si-doped GaN ([Si] = 2.1 × 1016 cm−3), the room temperature (RT) ...
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(1- 100) ±0.1o, 12.5 ± 1 mm 2-Inch Free-Standing N-GaN Substrates GaN-FS-C-N-C50-SSP 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm ...
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2inch GaN substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size ...
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N Type , Si-Doped Single Crystal Gallium Arsenide Wafer , 4”, Test Grade PAM-XIAMEN provides both single crystal and polycrystalline GaAs wafer ( Gallium Arsenide ) for opto...
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P Type , Zn-Doped GaAs Wafer , 2”, Test Grade -Powerway Wafer PAM-XIAMEN provides both single crystal and polycrystalline GaAs wafer ( Gallium Arsenide ) for opto-electronics and ...
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