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[China]
Trade Verify
Address: Rm5-616，NO.851,Dianshanhu road; Qingpu area;shanghai city//201799
Contact name:Wang
SHANGHAI FAMOUS TRADE CO.,LTD |
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Verified Suppliers
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2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe +
growth (modified VFG method) is used to pull a single crystal through a boric oxide liquid encapsulant starting from a seed.
The dopant (Fe, S, Sn or Zn)is added to the crucible along with the
polycrystal. High pressure is applied inside the chamber to prevent
decomposition of the Indium Phosphide.he company has developed a process to yield fully stoechiometric, high purity
and low dislocation density inP single crystal.
The VFG technique improves upon the LEC method thanks to
a thermal baffle technology in connection with a numerical
modeling of thermal growth conditions. tCZ is a cost-effective mature technology with high quality reproducibility from boule to boule.
Applications:
IIt has the advantages of high electronic limit drift speed, good
radiation resistance and good heat conduction. Suitable for
manufacturing high-frequency, high-speed, high-power microwave
devices and integrated circuits.
Features:
1. The crystal is grown by liquid-sealed straight-drawing
technology (LEC), with mature technology and stable electrical
performance.
2, using X-ray directional instrument for precise orientation, the
crystal orientation deviation is only ±0.5°
3, the wafer is polished by chemical mechanical polishing (CMP)
technology, surface roughness <0.5nm
4, to achieve the "open box ready to use" requirements
5, according to user requirements, special specifications product
processing
| size (mm) | Dia50.8x0.5mm,10×10×0.5mm,10×5×0.5mm can be customized | ||||||
| ra | Surface roughness(Ra):<=5A | ||||||
| polish | single or doubles side polished | ||||||
| package | 100 grade cleaning plastic bag in 1000 cleaning room | ||||||
---FAQ –
A: Generally it is 5-10 days if the goods are in stock. or it is 15-20 days if the goods are not
in stock,it is according to quantity.
