Results for800ma mosfet transistorfrom 9505 Products.
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Power MOSFET 200 mA, 50 V N−Channel SOT−23 Typical applications are DC−DC converters, power management in portable and battery−powered products such as computers, printers, PCMCIA ...
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ingle Pole, Normally Open, 0-250V, 190mA AC/DC Features " HEXFET Power MOSFET output " Bounce-free operation " 4,000 VRMS I/O isolation " Load current limiting " Linear AC/DC ...
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KA5M0380RYDTU Power Switch(FPS) low power mosfet high voltage power mosfet Features • Precision Fixed Operating Frequency (100/67/50kHz) • Low Start-up Current(Typ. 100uA) • Pulse ...
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TC4426/TC4427/TC4428 1.5A Dual High-Speed Power MOSFET Drivers Features: • High Peak Output Current – 1.5A • Wide Input Supply Voltage Operating Range: - 4.5V to 18V • High ...
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STP3NK90Z - STP3NK90ZFP STD3NK90Z - STD3NK90Z-1 N-CHANNEL 900V - 4.1Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET • TYPICAL RDS(on) = 4.1 Ω • EXTREMELY ...
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SUD40N06-25L N-Channel 60-V (D-S), 175℃ MOSFET, Logic Level PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A)a 60 0.022 @ VGS = 10 V 30 0.025 @ VGS = 4.5 V 30 ABSOLUTE MAXIMUM RATINGS (TC...
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MOSFETs Silicon N-Channel MOS (DTMOS) TK10P60W Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super ...
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IRFP260NPbF HEXFET® Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated • Ease of Paralleling • ...
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IRFR/U9120N HEXFET® Power MOSFET • Ultra Low On-Resistance • P-Channel • Surface Mount (IRFR9120N) • Straight Lead (IRFU9120N) • Advanced Process Technology • Fast Switching • ...
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IRFZ34NPbF HEXFET® Power MOSFET • Advanced Process • Technology Ultra Low On-Resistance • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Ease of Paralleling ...
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SiHG20N50C Power MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit Ron x Qg • 100 % Avalanche Tested • High Peak Current Capability • dV...
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STW21NM60N N-CHANNEL 600V 0.19 Ω - 17 A SECOND GENERATION MOSFET General Features ■ 100% AVALANCHE TESTED ■ LOW INPUT CAPACITANCE AND GATE CHARGE ■ LOW GATE INPUT RESISTANCE ...
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IRFP064NPBF HEXFET Power MOSFET STOCK LIST : AD9680BCPZ-1000 1000 ADI NEW LFCSP AD9642BCPZ-250 1000 ADI NEW LFCSP32 HX1838 20000 HX NEW DIP-3 BD13710S 10000 FAIRCHILD NEW TO-126 ...
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AO3400A N-Channel Enhancement Mode Field Effect Transistor General Description The AO3400A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This ...
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Complementary power Darlington transistors Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter ...
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Silicon PNP Power Transistors 2SB668 DESCRIPTION ·With TO-220C package ·High DC current gain ·DARLINGTON APPLICATIONS ·For use in power amplifier and switching applications ...
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Silicon NPN Power Transistors 2SC2073 DESCRIPTION ·With TO-220 package ·Complement to type 2SA940 APPLICATIONS ·Power amplifier applications ·Vertical output applications Absolute ...
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Silicon NPN Power Transistors 2SD669 2SD669A DESCRIPTION ·With TO-126 package ·Complement to type 2SB649/649A ·High breakdown voltage VCEO:120/160V ·High current 1.5A ·Low ...
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TIP120/121/122 Medium Power Linear Switching Applications • Complementary to TIP125/126/127 NPN Epitaxial Darlington Transistor Absolute Maximum Ratings TC=25°C unless otherwise ...
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Silicon NPN Power Transistors 2SC4927 DESCRIPTION ·With TO-3PML package ·Built-in damper diode ·High breakdown voltage APPLICATIONS ·TV/Character display horizontal deflection ...
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