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BSS138LT1G Power Mosfet Transistor Power MOSFET 200 mA , 50 V N−Channel SOT−23

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Anterwell Technology Ltd.

BSS138LT1G Power Mosfet Transistor Power MOSFET 200 mA , 50 V N−Channel SOT−23

Country/Region china
City & Province shenzhen guangdong
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Product Details

 

Power MOSFET 200 mA, 50 V N−Channel SOT−23

 

  Typical applications are DC−DC converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

 

Features

• Pb−Free Packages are Available

• Low Threshold Voltage (VGS(th):

0.5 V−1.5 V) Makes it Ideal for Low Voltage Applications

• Miniature SOT−23 Surface Mount Package Saves Board Space

 

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

4. 318−03 AND −07 OBSOLETE, NEW STANDARD 318−08.

 

 

 

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)


Rating Symbol Value Unit
Drain−to−Source VoltageVDSS 50Vdc
Gate−to−Source Voltage − ContinuousVGS± 20Vdc
Total Power Dissipation @ TA = 25°CPD225mW
Operating and Storage Temperature RangeTJ, Tstg− 55 to 150°C
Thermal Resistance − Junction−to−AmbientRJA556°C/W
Maximum Lead Temperature for Soldering Purposes, for 10 secondsTL260°C

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