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TIP120 Power Mosfet Transistor Complementary Silicon Transistors

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Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China

Contact name:Sharon Yang

TIP120/121/122

Medium Power Linear Switching Applications

• Complementary to TIP125/126/127

NPN Epitaxial Darlington Transistor

Absolute Maximum Ratings T_C=25°C unless otherwise noted

Symbol	Parameter	Value	Units
V_CBO	Collector-Base Voltage : TIP120 : TIP121 : TIP122	60 80 100	V V V
V_CEO	Collector-Emitter Voltage : TIP120 : TIP121 : TIP122	60 80 100	V V V
V_EBO	Emitter-Base Voltage	5	V
I_C	Collector Current (DC)	5	A
I_CP	Collector Current (Pulse)	8	A
I_B	Base Current (DC)	120	mA
P_C	Collector Dissipation (Ta=25°C)	2	W
P_C	Collector Dissipation (T_C=25°C)	65	W
T_J	Junction Temperature	150	°C
T_STG	Storage Temperature	- 65 ~ 150	°C

Typical characteristics

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