Active Member
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[China]
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
Contact name:Sharon Yang
Anterwell Technology Ltd. |
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Silicon NPN Power Transistors 2SD669 2SD669A
DESCRIPTION
·With TO-126 package
·Complement to type 2SB649/649A
·High breakdown voltage VCEO:120/160V
·High current 1.5A
·Low saturation voltage,excellent hFE linearity
APPLICATIONS
·For low-frequency power amplifier applications
Absolute maximum ratings(Ta=25℃)
| SYMBOL | PARAMETER | CONDITIONS | VALUE | UNIT | |
| VCBO | Collector-base voltage | 2SD669 | Open emitter | 180 | V |
| 2SD669A | 180 | V | |||
| VCEO | Collector-emitter voltage | 2SD669 | Open base | 120 | V |
| 2SD669A | 160 | V | |||
| VEBO | Emitter-base voltage | Open collector | 5 | V | |
| IC | Collector current (DC) | 1.5 | A | ||
| ICM | Collector current-peak | 3 | A | ||
| PD | Total power dissipation | Ta=25℃ | 1 | W | |
| TC=25℃ | 20 | W | |||
| Tj | Junction temperature | 150 | ℃ | ||
| Tstg | Storage temperature | -55~150 | ℃ | ||
PACKAGE OUTLINE
Stock Offer (Hot Sell)
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