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zeit 350 300mm quartz photomask substrate

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Results forzeit 350 300mm quartz photomask substratefrom 1260 Products.
4inch 4H-SiC substrate D-level N-Type 350.0±25.0μm MPD≤5/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm for power and microwave devices Overview High Temperature Devices Because SiC has a ...
Shanghai, china
Verified
Indoor Screw Bolt Aluminum Square Truss System 300mm*300mm Size details: Small size:150*150mm,200 * 200mm,250*250mm, Medium size:290*290mm,300*300mm, 350*350mm,390*390mm,400*400mm ...
Guangdong, china
Verified
High Power Medical Phototherapy 308nm 5 - 7V UVB LED diode for producing Vitamin D models LN-SMD3535UVB-P0.5 Electronic power 0.5W Dominant Wavelength 308nm(Therapeutic) Radiant ...
china
Verified
LiNbO3 LiTaO3 Quartz Piezoelectric Wafer For Piezoelectric Sensor and Transducer With the Piezoelectric Effect the most unique trait of this effect is that it works two ways. You ...
Shanghai, china
Verified
12M Span 350*450mm Size Arc Roofing Aluminum Truss For Show Arc Truss And Ladder Truss For Event And Display Quick Detail: Quickly install and dismantle Good quality Corrosion ...
Guangdong, china
Verified
6inch 4H-SiC substrate D-level SI-Type 350.0±25.0μm MPD≤5/cm2 Resistivity≥1E5Ω·cm for power and microwave devices Overview Sized for improved production With the 150 mm wafer size, ...
Shanghai, china
Verified
High Density 200W 395nm UV LED Chips With Quartz Glass Lens High Density 200W 395nm UV LED Chips At 80MM Distance Results 5000+MW/CM2 Product Specifications models LN-CVS35UV-P84-A ...
china
Verified
LiNbO3 LiTaO3 Quartz Piezoelectric Wafer for Higher Frequency SAW Devices Piezoelectric Wafer Description The basic principle of SAW devices is the generation of elastic surface ...
Shanghai, china
Verified
Square Aluminum Performance Stage Lighting Truss 300 X 300mm Specification Size(mm) Main Tube(mm) Horizontal tube(mm) Brace Tube(mm) Loading Capacity(kg) Span(m) 300*300 50*3 30*2 ...
Guangdong, china
Verified
6inch 4H-SiC substrate N-Type P-MOS Grade 350.0±25.0μm MPD≤0.2/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm for power and microwave devices Overview SiC is used for the fabrication of very ...
Shanghai, china
Verified
Screw Pattern Truss ,350*450mm Lighting Truss, Bolt Truss Apply to Concert Event All size of truss: Heavy Duty Truss: 910mm*760mm/760mm*600mm/520mm*760mm/500mm*600mm Medium Duty ...
Guangdong, china
Verified
10*10.5mm2 C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Gallium Nitride (GaN) substrate is a high...
Shanghai, china
Verified
Square Bolt Aluminum Performance Stage Lighting Truss 300 X 300mm Specification Size(mm) Main Tube(mm) Horizontal tube(mm) Brace Tube(mm) Loading Capacity(kg) Span(m) 300*300 50*3 ...
Guangdong, china
Verified
5 X 10 mm2 M Face Free-Standing GaN Substrates 350 ±25 µm TTV ≤ 10 µm 5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power ...
Shanghai, china
Verified
Screw Pattern Truss ,350*450mm Lighting Truss, Bolt Truss Apply to Concert Event All size of truss: Heavy Duty Truss: 910mm*760mm/760mm*600mm/520mm*760mm/500mm*600mm Medium Duty ...
Guangdong, china
Verified
5 x 10mm2 Free-standing GaN Substrates 350 ±25 µm From 1 x 105 to 3 x 106 cm-2 5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate ...
Shanghai, china
Verified
Square Aluminum Performance Stage Lighting Truss 300 X 300mm Specification Size(mm) Main Tube(mm) Horizontal tube(mm) Brace Tube(mm) Loading Capacity(kg) Span(m) 300*300 50*3 30*2 ...
Guangdong, china
Verified

SiC N Type Substrate

Apr,11,2024
6inch 4H-SiC Substrate N-Type P-SBD Grade 350.0±25.0μm MPD≤0.5/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm For Power And Microw 6inch 4H-SiC substrate N-Type Overview Currently silicon ...
Shanghai, china
Verified
Square Bolt Aluminum Performance Stage Lighting Truss 300 X 300mm Specification Size(mm) Main Tube(mm) Horizontal tube(mm) Brace Tube(mm) Loading Capacity(kg) Span(m) 300*300 50*3 ...
Guangdong, china
Verified
2-inch Free-standing U-GaN/SI-GaN Substrates 350 ± 25 μm 50.8 ± 1 mm 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device...
Shanghai, china
Verified
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