Home Products Hardware Abrasives

n type wafer p mos grade

Refine Search
Results forn type wafer p mos gradefrom 11 Products.
2inch 4/6inch dia50.6mm sic seed wafer 1mm thickness for ingot growth Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm ...
Shanghai, china
Verified
2inch 4/6inch dia200mm sic seed wafer 1mm thickness for ingot growth High Purity 4 6 8-inch conductive semi-insulation SiC single crystal wafer Customized size/2inch/3inch/4inch...
Shanghai, china
Verified
4h-n 4inch 6inch dia100mm sic seed wafer 1mm thickness for ingot growth Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm ...
Shanghai, china
Verified
6inch Dia150mm 350um Thickness 4H N Type SiC Substrate For SBD For MOS Application 2inch Dia50mm 4H Semi SiC Substrate Research Grade Single Crystal 2inch dia50mm 330μm thickness ...
Shanghai, china
Verified
4H-N Type Semi-Insulating SiC Substrates 2inch 3inch 4inch Silicon Carbide Wafers 6inch Dia150mm 350um Thickness 4H N Type SiC Substrate For SBD For MOS Application 2inch Dia50mm ...
Shanghai, china
Verified
4inch 6inch 4H-N sic wafers dummy Prime Production grade for SBD MOS Device,4H-N 4inch 6inch Sic Wafers Semiconductor High Crystal Quality For Demanding Power Electronics, 4H-N ...
Shanghai, china
Verified
4inch 6inch 4H-N sic wafers dummy Prime Production grade for SBD MOS Device,4H-N 4inch 6inch Sic Wafers Semiconductor High Crystal Quality For Demanding Power Electronics, 4H-N ...
Shanghai, china
Verified
4inch 6inch 8inch 4H-N sic wafers dummy Prime Production grade for SBD MOS Device, 8inch 6inch 4H-N Type Sic Substrate Wafer Production Grade For Radio Frequency Devices SiC ...
Shanghai, china
Verified
6inch 4H-SiC substrate N-Type P-MOS Grade 350.0±25.0μm MPD≤0.2/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm for power and microwave devices Overview SiC is used for the fabrication of very ...
Shanghai, china
Verified
6inch 4H-SiC Substrate N-Type P-SBD Grade 350.0±25.0μc MPD≤0.5/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm For Power And Microw 6inch 4H-SiC substrate N-Type Overview SiC boules (crystals) ...
Shanghai, china
Verified
6inch 4H-SiC Substrate N-Type P-SBD Grade 350.0±25.0μm MPD≤0.5/cm2 Resistivity 0.015Ω•Cm—0.025Ω•Cm For Power And Microw 6inch 4H-SiC substrate N-Type Overview Silicon carbide (SiC) ...
Shanghai, china
Verified
Page 1 of 1 |< << 1 >> >|