Results forun doped gan epitaxial waferfrom 540 Products.
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5 X 10 mm2 M Face Free-Standing GaN Substrates 350 ±25 µm TTV ≤ 10 µm 5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power ...
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10*10mm2 Mg-Doped GaN Epitaxial Wafers On Sapphire Substrates For GaN Power Amplifier PAM-XIAMEN’s Template Products consist of crystalline layers of gallium nitride (GaN), ...
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CVD SiC Epitaxy Wafer 2inch 3inch 4inch 6inch epitaxy thickness 2.5-120 um for electronic power Product Descriptions SiC Epitaxy Wafers: These are single-crystal silicon carbide ...
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Fe doped Lithium Niobate Wafer Optical Grade and SAW Grade Lithium Niobate (LiNbO3) is a useful optoelectronic material. The material not only has unique piezoelectric, optical and ...
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Special Orientation A-axis R-axis M-axis 2inch 3inch 4inch 6inch sapphire substrates wafers for GaN epitaxial growth； Sapphire is one of the hardest materials, and possesses very ...
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SAW Grade Doping Lithium Niobate Wafer MgO Er Fe Doped LT Optical Grade LiNbO3 is a nonlinear optical grade crystal,MgO-doped LiNbO3 can effectively increase the damage threshold ...
china
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Silicon Back Grinding Wheels Sapphire Epitaxial Wafer For Simiconductor Field Product Features The grinding wheels for LED substrate are mainly used for back thinning of sapphire ...
china
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6A2 Back Grinding Wheel High Efficiency Custom Size Sapphire Epitaxial Wafer Hongtuo, as a major designer, manufacturer and distributor of diamond and CBN grinding wheels, can ...
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ZnO Wafer, CdS wafer, CdSe wafer, CdTe wafer, ZnS wafer, ZnSe wafer and ZnTe wafer We provides high purity single crystal ZnO wafer and ZnO bulk for power device , LED , sensor and ...
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4 inch GaN-on-Si epi wafer manufacturer Power HEMT Homray Material Technology Supply 4inch,6 inch and 8 inch diameter GaN-on-Si epi wafer with AlGaN/GaN hetero-epitaxial layer structure grown on a Silicon (111) substrate ...
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With wide direct bandgap(3.4 eV), strong atomic bonds, high thermal conductivity and excellent radiation resistance, GaN is not only short-wave-length optoelectronic material, but ...
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2 inch GaN Templates: Dimensions:Ф 50.8mm ± 0.1mm Thickness:4 µm, 20 µm; 4 µm Orientation:C-plane(0001) ± 0.5° Conduction Type:N-type(Undoped); N-type(Si-doped); P-type(Mg-doped) ...
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Etching Tray Semiconductor Consumables Main features The etching tray is made of high purity sintered silicon carbide ceramics without pressure.It has the characteristics of high ...
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M10 wafer Solar Panel for ultra-large power plant or distributed projects superior module efficiency 555W 144 half cell MONO-FACIAL MODULE P-Type /Positive power tolerance of 0~+3%...
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2inch DSP Sapphire Wafer SSP Substrate Single Side Polished Wafer 2inch/4inch/6inch/8inch Description The 2inch SSP double side polished sapphire substrates can be manufactured ...
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High Definition P5 Full Color Outdoor Led Billboard With Large Pcb Board 320mm*160mm led digital display board Shenzhen Shichuangxinke Electronics (SCXK in brief) was established ...
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Original electronic components Rectifier Diode 1 Phase 2Element 20A 200V V(RRM) Silicon SC-65 3PIN d92-02 Products Description: 1. D92-02 is an N-type silicon epitaxial ultrafast ...
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3W G4 LED Light AC220V SMD2835 Silicone 40pcs DC12V G9 LED Light 360 Degree 1. Description: The luminous efficiency of LED G4 lamp beads is determined by how many layers can be ...
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Original New In Box Fuji Electric NC1S-1 Power Supply Module PLC History of Fuji IGBT structure Fuji Electric has supplied IGBTs to the market since it commercialized them in 1988. ...
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Supply Semiconductor Ion Implanted Tungsten Molybdenum Precision Parts Ion Source Assembly Ion implantation is a common process for semiconductor doping and modification. Ionize ...
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