Results foru gan substratesfrom 215 Products.
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C-axis (0001) orientation 12inch diameter 300mm with notch DSP Sapphire Substrate wafers thickness 1.5mm C-a Special Orientation SSP/ DSP A-axis <11-20> R-axis <1-102> M-axis<10-10...
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10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating ...
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2inch ,4inch Gallium Nitride AlN template wafer on sapphire or sic substrates,HVPE Gallium Nitride wafer,AlN templates III-Nitride(GaN,AlN,InN) Forbidden band width (light emitting ...
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4 inch GaN-on-Si epi wafer manufacturer Power HEMT Homray Material Technology Supply 4inch,6 inch and 8 inch diameter GaN-on-Si epi wafer with AlGaN/GaN hetero-epitaxial layer structure grown on a Silicon (111) substrate ...
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2 inch GaN Templates: Dimensions:Ф 50.8mm ± 0.1mm Thickness:4 µm, 20 µm; 4 µm Orientation:C-plane(0001) ± 0.5° Conduction Type:N-type(Undoped); N-type(Si-doped); P-type(Mg-doped) ...
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2 Inch 50.8 Sapphire Substrate wafer Double Side Polished M Axis C Axis A Axis Special Orientation SSP/ DSP A-axis <11-20> R-axis <1-102> M-axis<10-10> 2inch 3inch 4inch 6inch ...
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6inch 4H-SiC Substrate N-Type P-SBD Grade 350.0±25.0μm MPD≤0.5/cm2 Resistivity 0.015Ω•cm—0.025Ω•cm For Power And Microw 6inch 4H-SiC substrate N-Type Overview Currently silicon ...
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GaN-on-SiC epi wafer supplier for RF application customized Homray Material Technology provide high quality GaN-on-SiC epitaxial wafer for RF application. We supply 4inch and 6 inch GaN on SiC epi wafer with semi...
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Special Orientation SSP/ DSP A-axis <11-20> R-axis <1-102> M-axis<10-10> 2inch 3inch 4inch 6inch sapphire substrates wafers for GaN epitaxial growth；0.1mm/100um 2inch sapphire c...
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Single side polished Ga2O3 Single Crystal Substrate Thickness 0.6~0.8mm 10x15mm2(010)Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness ...
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Special Orientation SSP/ DSP A-axis <11-20> R-axis <1-102> M-axis<10-10> 2inch 3inch 4inch 6inch sapphire substrates wafers for GaN epitaxial growth；0.1mm/100um 2inch sapphire c...
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10x10mm2 100(off 6°) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤5nm Optoelectronic devices, ...
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Special Orientation SSP/ DSP A-axis <11-20> R-axis <1-102> M-axis<10-10> 2inch 3inch 4inch 6inch sapphire substrates wafers for GaN epitaxial growth；0.1mm/100um 2inch sapphire c...
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10x10mm2(010)Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.5nm Resistance 1.53E+18Ω/cm-3 Optoelectron...
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Al2O3 crystal Dia50.8mm <10-10> M-axis 2Inch Sapphire Wafers For epitaxial Thickness 500um Double side polished DSP Special Orientation SSP/ DSP A-axis <11-20> R-axis <1-102> M...
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Al2O3 crystaACl Dia100mm <0001> M-axis 4Inch Sapphire Wafers Thickness 500UM 600um Double side polished SSP OR DSP Special Orientation SSP/ DSP A-axis <11-20> R-axis <1-102> M-axis...
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Special Orientation SSP/ DSP A-axis <11-20> R-axis <1-102> M-axis<10-10> 2inch 3inch 4inch 6inch sapphire substrates wafers for GaN epitaxial growth； TYPICAL CHOICES FOR PART ...
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Silicon Carbide (SiC) Substrates 4H and 6H Epi-Ready SiC Substrate/Wafers (150mm, 200mm) Silicon Carbide(SiC) wafer N Type 6inch SIC Wafer 4H-N Type production grade sic epitaxial ...
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2inch R-axis sapphire wafer for epi-ready test ,sapphire optical windows, R-axis 2inch sapphire epi-ready substrate 1. Description Sapphire is one of the hardest materials, and ...
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4h-n 4inch 6inch dia100mm sic seed wafer 1mm thickness for ingot growth Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm ...
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