2 Inch 50.8mm Sapphire Substrate Wafer Double Side Polished M Axis C Axis A Axis

The Specifications for 2inch c-axis wafers

Size: 2-inch DSP-100-R-axis

Material: KY Sapphire Al2O3 single crystal without bubble；color ；

Orientation:C-cut,M-axis off 0.0+/-0.2°；
Diameter: 50.8 +/-0.2mm ；

Thickness:100 ± 15 um ；
OF Flat:16.0 +/- 1.0 mm ； OR round shape
OF orientation: a-axis 
Surface: SSP /dsp  Epi-ready Polished ；
TTV<= 10um ；BOW<= 20um ； Warp<= 20 um ；
Front Surface Roughness (Ra) Ra <= 0.3 nm； or double side 
Back Surface Roughness (Ra)  Ra = 1.0 +/-0.2um ；
Edge: from 1mm ；

The Applications for sapphire wafer substrates

Sapphire is composed of alumina (A1203), which is composed of three oxygen atoms and two aluminum atoms in a covalent bond type, and its crystal structure is a hexagonal lattice structure. It is often used on A-Plane, C-Plane, and R-Plane facets. Due to its wide optical penetration band, sapphire has excellent light transmission from near ultraviolet (190nm) to mid-infrared. Therefore, it is widely used in optical components, infrared devices, high-intensity laser lens materials, and mask materials, it has the characteristics of high sound speed, high-temperature resistance, corrosion resistance, high hardness, high light transmittance, high melting point (2045°C) and so on. It is a rather difficult material to process, so it is often used as a photoelectric element material. At present, the quality of ultra-high brightness white/blue LED depends on the material quality of nitride epitaxial (Ga), while the quality of nitride epitaxial is closely related to the surface processing quality of the sapphire substrate used. The lattice constant mismatch rate between the C surface of sapphire (single crystal A1203) and the films of II-V and II-VI groups are small. At the same time, it meets the requirement of high-temperature resistance in the GaN epitaxial process, making the sapphire wafer the key material for making white/blue/green LEDs.

The stock of sapphire wafer