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[China]
Trade Verify
Address: Rm5-616，NO.851,Dianshanhu road; Qingpu area;shanghai city//201799
Contact name:Wang
SHANGHAI FAMOUS TRADE CO.,LTD |
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Verified Suppliers
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Silicon Carbide (SiC) Substrates 4H and 6H Epi-Ready SiC Substrate/Wafers (150mm, 200mm) Silicon Carbide(SiC) wafer
N Type
6inch SIC Wafer 4H-N Type production grade sic epitaxial wafers GaN
layer on sic
About Silicon Carbide (SiC)Crystal
Shanghai Famous Trade Co., Ltd 150 mm SiC wafers offer device manufacturers a consistent, high-quality substrate for developing high-performance power devices. Our SiC substrates are produced from crystal ingots of the highest quality using proprietary state-of-the-art physical vapor transport (PVT) growth techniques and computer-aided manufacturing (CAM). Advanced wafer manufacturing techniques are used to convert ingots into wafers to ensure the consistent, reliable quality you need.
With the 6inch 150 mm SiC wafer size, we offer manufacturers the ability to leverage improved economies of scale compared with 100 mm device fabrication. Our 6inch 150 mm SiC Wafers offer consistently excellent mechanical characteristics to ensure compatibility with existing and developing device fabrication processes.
| 6inch 200mm N-Type SiC Substrates Specifications | ||||
| Property | P-MOS Grade | P-SBD Grade | D Grade | |
| Crystal Specifications | ||||
| Crystal Form | 4H | |||
| Polytype Area | None Permitted | Area≤5% | ||
| (MPD) a | ≤0.2 /cm2 | ≤0.5 /cm2 | ≤5 /cm2 | |
| Hex Plates | None Permitted | Area≤5% | ||
| Hexagonal Polycrystal | None Permitted | |||
| Inclusions a | Area≤0.05% | Area≤0.05% | N/A | |
| Resistivity | 0.015Ω•cm—0.025Ω•cm | 0.015Ω•cm—0.025Ω•cm | 0.014Ω•cm—0.028Ω•cm | |
| (EPD)a | ≤4000/cm2 | ≤8000/cm2 | N/A | |
| (TED)a | ≤3000/cm2 | ≤6000/cm2 | N/A | |
| (BPD)a | ≤1000/cm2 | ≤2000/cm2 | N/A | |
| (TSD)a | ≤600/cm2 | ≤1000/cm2 | N/A | |
| (Stacking Fault) | ≤0.5% Area | ≤1% Area | N/A | |
| Surface Metal Contamination | (Al, Cr, Fe, Ni, Cu, Zn, Pb, Na, K, Ti, Ca ,V, Mn) ≤1E11 cm-2 | |||
| Mechanical Specifications | ||||
| Diameter | 150.0 mm +0mm/-0.2mm | |||
| Surface Orientation | Off-Axis:4°toward <11-20>±0.5° | |||
| Primary Flat Length | 47.5 mm ± 1.5 mm | |||
| Secondary Flat Length | No Secondary Flat | |||
| Primary Flat Orientation | <11-20>±1° | |||
| Secondary Flat Orientation | N/A | |||
| Orthogonal Misorientation | ±5.0° | |||
| Surface Finish | C-Face:Optical Polish,Si-Face:CMP | |||
| Wafer Edge | Beveling | |||
| Surface Roughness (10μm×10μm) | Si Face Ra≤0.20 nm ； C Face Ra≤0.50 nm | |||
| Thickness a | 350.0μm± 25.0 μm | |||
| LTV(10mm×10mm)a | ≤2μm | ≤3μm | ||
| (TTV)a | ≤6μm | ≤10μm | ||
| (BOW) a | ≤15μm | ≤25μm | ≤40μm | |
| (Warp) a | ≤25μm | ≤40μm | ≤60μm | |
| Surface Specifications | ||||
| Chips/Indents | None Permitted ≥0.5mm Width and Depth | Qty.2 ≤1.0 mm Width and Depth | ||
| Scratches a (Si Face,CS8520) | ≤5 and Cumulative Length≤0.5×Wafer Diameter | ≤5 and Cumulative Length≤1.5× Wafer Diameter | ||
| TUA(2mm*2mm) | ≥98% | ≥95% | N/A | |
| Cracks | None Permitted | |||
| Contamination | None Permitted | |||
| Edge Exclusion | 3mm | |||
4H-N Type / High Purity SiC wafer/ingots 2 inch 4H N-Type SiC wafer/ingots 3 inch 4H N-Type SiC wafer 4 inch 4H N-Type SiC wafer/ingots 6 inch 4H N-Type SiC wafer/ingots | 2 inch 4H Semi-insulating SiC wafer 3 inch 4H Semi-insulating SiC wafer 4 inch 4H Semi-insulating SiC wafer 6 inch 4H Semi-insulating SiC wafer |
6H N-Type SiC wafer 2 inch 6H N-Type SiC wafer/ingot | Customzied size for 2-6inch |
>Packaging – Logistics
Concerns about each detail of the package, cleaning, anti-static,
and shock treatment.
According to the quantity and shape of the product, we will take a
different packaging process! Almost by single wafer cassettes or
25pcs cassettes in the 100-grade cleaning room.
