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6’’ High Purity Silicon 4H-Semi SIC Dummy Grade Semiconductor Wafers 5G LED Description: Semi-Insulating 4H-SiC (semi-insulating 4H-SIC) is a special type of silicon carbide ...
Shanghai, china
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Dia4inch 100mm 0.43mm 430um Thickness Sapphire Single Crystal Wafer Substrate C-Plane M-Plane 1sp 2sp Product Description: Sapphire Wafer Substrate Carrier is a high-precision ...
Shanghai, china
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Gallium Gadolinium Garnet (Gd3Ga5O12 or GGG) Single Crystal Gallium Gadolinium Garnet (Gd3Ga5O12 or GGG) single crystal is material with good optical, mechanical and thermal ...
china
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Lead-Free Congruent LiNbO3 (LNC) Single Crystals With Large ME Effects Recently, we have shown the possibility to produce large ME effects in composites containing lead-free ...
Shanghai, china
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5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Power density is greatly improved in gallium ...
Shanghai, china
Verified
2” 3’’ FZ SiO2 Single Crystal IC Chips 100um 200um Dry Wet Oxidation Layer 100nm 300nm Product description: The silicon wafer is formed through a furnace tube in the presence of an ...
Shanghai, china
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sapphire glass blade for razor,Al2O3 single crystal glass wafer,artificial sapphire injector ,sapphre lenssapphire optical lens, Al2O3 single crystal glass ,sapphire optical glass ...
Shanghai, china
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4mm x 4mm x 50mm LGS Single Crystal With Au Coating Bar​ Langasite crystal (La3Ga5SiO14,LGS), belonging to the space group P321, point group 32, has been reported to be promising ...
china
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5*10.5mm2 SP-face (10-11) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Generative adversarial networks (GANs) are ...
Shanghai, china
Verified
Lithium Niobium Trioxide Lithium Tantalate Crystals Lithium Niobate LT LN Crystals For 5G Application Lithium niobate crystal is one of the most widely used new inorganic materials...
Shanghai, china
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12Inch 300mm Thickness 1.0mm Sapphire Wafers Substrate Ssp Dsp C-Plane Single Crystal 99.999% Al2O3 Sapphire wafers are known for their exceptional strength and durability in harsh ...
Shanghai, china
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5*10mm2 SP-face (10-11) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview GaN has many serious advantages over ...
Shanghai, china
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5*10mm2 SP-face (10-11) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Now a new material called Gallium Nitride (GaN) has the ...
Shanghai, china
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5*10mm2 SP-face (11-12) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Because GaN transistors are able to ...
Shanghai, china
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5*10mm2 SP-face (20-21)/(20-2-1) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview A generative adversarial ...
Shanghai, china
Verified
5*10.5mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Power density is greatly improved in gallium ...
Shanghai, china
Verified
5*10mm2 M-face Un-doped n-type Free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Various physical aspects and potential applicatio...
Shanghai, china
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JDCD02-001-001 1inch AlN single crystal 400±50μm S/P/R grade AlN substrate is one of the most popular ceramic substrate which has excellent heat resistance, high mechnical strength ...
Shanghai, china
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JDCD02-001-001 1inch AlN single crystal 400±50μm S/P/R grade AlN substrate is one of the most popular ceramic substrate which has excellent heat resistance, high mechnical strength ...
Shanghai, china
Verified
25.4±0.5mm 1inch AlN Single Crystal 400±50μM S/P/R Grade {0001}±0.5° JDCD02-001-002 1inch AlN single crystal 400±50μm S/P/R grade Aluminum Nitride is a highly desirable material in ...
Shanghai, china
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