Results forsingle crystal epitaxial waferfrom 4140 Products.
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4H SiC Epitaxial Wafer 0.015Ω•cm—0.025Ω•cm ≤4000/cm2 150.0 mm +0mm/-0.2mm JDCD03-001-003 Overview The next type is beta silicon carbide. Beta SiC is produced at temperatures higher ...
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2inch InP wafers 3inch 4inch N/P TYPE InP Semiconductor Substrate Wafers Doped S+/ Zn+ /Fe + Indium Phosphide Based Epitaxial Wafer Single Crystal Indium Phosphide Wafers InP wafer ...
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Purple 99.999% Sapphire Single Crystal Watchcases Back Glass For Custom Movements Description: Sapphire is one of the hardest materials in the world, sapphire Mohs hardness is 9, ...
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Different Angle Cuts of Single Crystal Quartz Customized Wafers used in various applications BonTek Optoelectronics provides high quality Single Crystal Quartz wafers in both SAW ...
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Dia 100 mm 4 inch Sapphire Substrate Wafer Single Side Polished Specification Orientation (22-43)Plane offcut 0.45° away from C plane-per sketch 22-43 Diameter 100mm ± 0.2mm ...
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7-inch SOI epitaxial wafer for MEMS processing Overview A silicon wafer is a material essential for manufacturing semiconductors, which are found in all kinds of electronic devices ...
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Clear Transparent Sapphire Single Crystal Materials For Watchcases Back Glass Crown Description: Sapphire commonly known as corundum, the main component is Al2O3, is a common ...
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4'' double side polish Single Crystal Quartz Wafer AT-Cut for Resonators, Oscillators and Filters Quartz Crystals are formed thanks to hydrothermal synthesis. Production takes ...
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Dia 100 mm 4 inch Sapphire Substrate Wafer Single Side Polished Specification Orientation (22-43)Plane offcut 0.45° away from C plane-per sketch 22-43 Diameter 100mm ± 0.2mm ...
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5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Power density is greatly improved in gallium ...
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5*10.5mm2 SP-face (10-11) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Generative adversarial networks (GANs) are ...
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5*10mm2 SP-face (10-11) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview GaN has many serious advantages over ...
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5*10mm2 SP-face (10-11) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Now a new material called Gallium Nitride (GaN) has the ...
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5*10mm2 SP-face (11-12) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Because GaN transistors are able to ...
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5*10mm2 SP-face (20-21)/(20-2-1) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview A generative adversarial ...
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5*10.5mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Power density is greatly improved in gallium ...
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5*10mm2 M-face Un-doped n-type Free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Various physical aspects and potential applicatio...
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5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Gallium nitride (GaN) is a very hard, mechanicall...
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4H SiC Epitaxial Wafer ≤0.2 /Cm2 150.0 Mm +0mm/-0.2mm 47.5 Mm ± 1.5 Mm JDCD03-001-004 Overview An epitaixal wafer is a wafer of semiconducting material made by epitaxial growth ...
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JDCD03-001-003 Overview SiC boules (crystals) are grown, machined into ingots, and then sliced into substrates, which are subsequently polished. A thin SiC epitaxial layer is then ...
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