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si face cmp sic epitaxial wafer

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2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/4inch 6inch silicon carbide SIC 4H-N seed crystal Wafer For crystal growth About Silicon Carbide (SiC)Crystal Silicon carbide ...
Shanghai, china
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4H-N Type Semi-Insulating SiC Substrates 2inch 3inch 4inch Silicon Carbide Wafers 6inch Dia150mm 350um Thickness 4H N Type SiC Substrate For SBD For MOS Application 2inch Dia50mm ...
Shanghai, china
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5*10mm2 SP-face (11-12) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device Overview Since the 1990s, it has been used commonly in light ...
Shanghai, china
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SiC Wafer

Apr,11,2024
SIC Wafer Semiconductor Wafer, Inc. ( SWI ) provides high quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is a next ...
Henan, china
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Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS/ High purity un...
Shanghai, china
Verified
4’’ 4H-Semi High-Purity SIC Wafers Prime Grade Semiconductor EPI Substrates Description of HP 4H-semi SIC: 1. The high purity semi-insulating 4H-SiC (silicon carbide) wafers are ...
Shanghai, china
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2inch GaAs (100) Undoped Substrates Overview GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, ...
Shanghai, china
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SiC Wafer

Apr,11,2024
SIC Wafer Semiconductor Wafer, Inc. ( SWI ) provides high quality single crystal SiC wafer ( Silicon Carbide ) to electronic and optoelectronic industry . SiC wafer is a next ...
Henan, china
Verified
Product Description: As the leading manufacturer and supplier ofSiC (Silicon Carbide)substrates wafers, ZMSH offers the best price on the market for 2 inch and 3 inch Research ...
Shanghai, china
Verified
4inch 6inch 4H-N sic wafers dummy Prime Production grade for SBD MOS Device,4H-N 4inch 6inch Sic Wafers Semiconductor High Crystal Quality For Demanding Power Electronics, 4H-N ...
Shanghai, china
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10*10.5mm² C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser Overview Premium quality GaN crystal substrates with low ...
Shanghai, china
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Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single un-doped 4" 6" 6inch 4h-semi sic wafer 4Inch ...
Shanghai, china
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8 Inch Silicone Carbide Tray Ceramic Tray For Epitaxial Growth Processing Graphite tray, and silicon carbide coated graphite tray, silicon carbide tray; Silicone Carbide Tray​ ...
Shanghai, china
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Product Description: As the leading manufacturer and supplier of SiC (Silicon Carbide) substrate wafer, ZMSH offers the best price on the market for 2 inch and 3 inch Research ...
Shanghai, china
Verified
4inch dia100m 4H-N type Production grade DUMMY grade SiC substrates,Silicon Carbide substrates for semiconductor device, customized thickness 4inch 4H-N silicon carbide crystal sic ...
Shanghai, china
Verified
Customzied size/10x10x0.5mmt/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS/ ...
Shanghai, china
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customzied size MPCVD method GaN&Diamond Heat Sink wafers for Thermal management area MPCVD method polytype Diamond substrate wafers for GaN epitaxial Diamond has wide band gap, ...
Shanghai, china
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High purity un-doped 4inch 4H-Semi silicon carbide sic wafers for optical lens or device Silicon Carbide SiC crystal substrate wafer carborundum SILICON CARBIDE MATERIAL PROPERTIES ...
Shanghai, china
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4H High Purity Semi-Insulating Silicon Carbide Substrateshigh purity 4inch SiC substrates ,4inch Silicon Carbide substrates for semiconductor 4inch SiC substrates ,Silicon Carbide ...
Shanghai, china
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silicon carbide sic broken block,Gem grade sic ingot , 5-15mm thickness sic scrap SiC Wafer Feature Property 4H-SiC, Single Crystal 6H-SiC, Single Crystal Lattice Parameters a=3...
Shanghai, china
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