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customized Thickness 1.5mm 4" 4H-N sic Crystal as-cut blank Wafers

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customized Thickness 1.5mm 4" 4H-N sic Crystal as-cut blank Wafers

Country/Region	china
City & Province	shanghai shanghai
Categories	Other Metals & Metal Products

Product Details

4inch dia100m 4H-N type Production grade DUMMY grade SiC substrates,Silicon Carbide substrates for semiconductor device,

customized thickness 4inch 4H-N silicon carbide crystal sic wafers for 4inch seed crystal grade;

Silicon Carbide SiC crystal substrate wafer carborundum

SILICON CARBIDE MATERIAL PROPERTIES

Product Name:

Silicon carbide (SiC) crystal substrate

Product Description:

2-6inch

Technical parameters:

Cell structure	Hexagonal
Lattice constant	a = 3.08 Å c = 15.08 Å
Priorities	ABCACB (6H)
Growth method	MOCVD
Direction	Growth axis or Partial (0001) 3.5 °
Polishing	Si surface polishing
Bandgap	2.93 eV (indirect)
Conductivity type	N or seimi ,high purity
Resistivity	0.076 ohm-cm
Permittivity	e (11) = e (22) = 9.66 e (33) = 10.33
Thermal conductivity @ 300K	5 W / cm. K
Hardness	9.2 Mohs

Specifications:

6H N-type 4H N-type semi-insulating dia2 "x0.33mm, dia2" x0.43mm,dia2''x1mmt, 10x10mm, 10x5mm Single throw or double throw, Ra <10A

Standard Packaging:

1000 clean room, 100 clean bag or single box packaging

Application of silicon carbide in power device industry

Compared with silicon (Si) devices, silicon carbide (SiC) power devices can effectively achieve high efficiency, miniaturization and light weight of power electronic systems. The energy loss of silicon carbide power devices is only 50% of that of Si devices, the heat generation is only 50% of that of silicon devices, and it has a higher current density. At the same power level, the volume of silicon carbide power modules is significantly smaller than that of silicon power modules. Taking the intelligent power module IPM as an example, using silicon carbide power devices, the module volume can be reduced to 1/3 to 2/3 of silicon power modules.

There are 3 types of silicon carbide power diodes: Schottky diodes (SBD), PIN diodes and junction barrier control Schottky diodes (JBS). Due to the Schottky barrier, SBD has a lower junction barrier height, so SBD has the advantage of low forward voltage. The emergence of silicon carbide SBD increased the application range of SBD from 250V to 1200V. At the same time, its high temperature characteristics are good, from room temperature to 175°C limited by the shell, the reverse leakage current hardly increases. In the application field of rectifiers above 3kV, silicon carbide PiN and silicon carbide JBS diodes have attracted attention due to their higher breakdown voltage, faster switching speed, smaller volume and lighter weight than silicon rectifiers.

Silicon carbide power MOSFET devices have ideal gate resistance, high-speed switching performance, low on-resistance and high stability. It is the preferred device in the field of power devices below 300V. It is reported that a silicon carbide MOSFET with a blocking voltage of 10kV has been successfully developed. Researchers believe that silicon carbide MOSFET will occupy an advantageous position in the field of 3kV to 5kV.

Silicon carbide insulated gate bipolar transistors (SiC BJT, SiC IGBT) and silicon carbide thyristors (SiC Thyristor), silicon carbide P-type IGBT devices with a blocking voltage of 12kV have good forward current capability. The on-resistance of silicon carbide IGBT devices can be compared with unipolar silicon carbide power devices. Compared with Si bipolar transistors, SiC bipolar transistors have 20-50 times lower switching losses and lower conduction voltage drop. Silicon carbide BJT is mainly divided into epitaxial emitter and ion implanted emitter BJT, and the typical current gain is between 10-50.

Performance Unit Silicon Si Silicon Carbide SiC Gallium Nitride GaN

Band gap eV 1.12 3.26 3.41

Breakdown electric field MV/cm 0.23 2.2 3.3

Electron mobility cm^2/Vs 1400 950 1500

Drift speed 10^7 cm/s 1 2.7 2.5

Thermal conductivity W/cmK 1.5 3.8 1.3

2. substrates size of standard

4 inch diameter Silicon Carbide (SiC) Substrate Specification
Grade		Zero MPD Grade	Production Grade	Research Grade	Dummy Grade
Diameter		100.0 mm±0.5 mm
Thickness		350 μm±25μm (200-2000um thickness also is ok)
Wafer Orientation		Off axis : 4.0° toward <1120> ±0.5° for 4H-N
Micropipe Density		≤1 cm-2	≤5 cm-2	≤15 cm-2	≤50 cm-2
Resistivity	4H-N	0.015~0.028 Ω•cm
	6H-N	0.02~0.1 Ω•cm
	4/6H-SI	≥1E5 Ω·cm
Primary Flat and length		{10-10}±5.0° ,32.5 mm±2.0 mm
Secondary Flat Length		18.0mm±2.0 mm
Secondary Flat Orientation		Silicon face up: 90° CW. from Prime flat ±5.0°
Edge exclusion		3 mm
TTV/Bow /Warp		≤15μm /≤25μm /≤40μm
Roughness		Polish Ra≤1 nm ,CMP Ra≤0.5 nm
Cracks by high intensity light		None		1 allowed, ≤2 mm	Cumulative length ≤ 10mm, single length≤2mm

Hex Plates by high intensity light		Cumulative area ≤1%		Cumulative area ≤1%	Cumulative area ≤3%
Polytype Areas by high intensity light		None		Cumulative area ≤2%	Cumulative area ≤5%
Scratches by high intensity light		3 scratches to 1×wafer diameter cumulative length		5 scratches to 1×wafer diameter cumulative length	5 scratches to 1×wafer diameter cumulative length
edge chip		None		3 allowed, ≤0.5 mm each	5 allowed, ≤1 mm each
Contamination by high intensity light		None