|
[China]
Trade Verify
Address: Rm5-616，NO.851,Dianshanhu road; Qingpu area;shanghai city//201799
Contact name:Wang
SHANGHAI FAMOUS TRADE CO.,LTD |
|
Verified Suppliers
|
|
|
As the leading manufacturer and supplier of SiC (Silicon Carbide) substrate wafer, ZMSH offers the best price on the market for 2 inch and 3 inch Research grade Silicon Carbide substrate wafers.
The SiC substrate wafer is widely used in electronic devices with high power and high frequency, such as light emitting diode (LED) and others.
A LED is a type of electronic component which uses the combination of semiconductor electrons and holes. It is an energy-saving and cold light source that has several advantages, such as long service life, small size, simple structure, and easy control.
Silicon Carbide (SiC) single crystal has excellent thermal conductivity properties, high saturation electron mobility, and high voltage breakdown resistance. It is suitable for preparing high frequency, high power, high temperature, and radiation-resistant electronic devices.
SiC single crystal has many excellent properties, including high thermal conductivity, high saturated electron mobility, strong anti-voltage breakdown, etc. It is suitable for the preparation of high frequency, high power, high temperature and radiation-resistant electronic devices.
The growth method of Silicon Carbide Substrate, Silicon Carbide Wafer, SiC Wafer, and SiC Substrate is MOCVD. The crystal structure can be either 6H or 4H. The corresponding lattice parameters for 6H are (a=3.073 Å, c=15.117 Å) and for 4H are (a=3.076 Å, c=10.053 Å). The stacking sequence of 6H is ABCACB, while that of 4H is ABCB. Available grade is Production Grade, Research Grade or Dummy Grade, conductivity type can be either N-type or Semi-Insulating. The band-gap of the product is 3.23 eV, with a hardness of 9.2 (mohs), a thermal conductivity at 300K of 3.2 to 4.9 W/ cm.K. Moreover, the dielectric constants is e(11)=e(22)=9.66 and e(33)=10.33. The resistivity of 4H-SiC-N is in the range of 0.015 to 0.028 Ω·cm, 6H-SiC-N is 0.02 to 0.1 Ω·cm and 4H/6H-SiC-SI is more than 1E7 Ω·cm. The product is packaged in a Class 100 clean bag in a Class 1000 clean room.
Silicon Carbide Wafer (SiC wafer) is a perfect choice for automotive electronics, optoelectronic devices, and industrial applications. It includes two kinds of substrates, 4H-N Type SiC substrate and Semi-Insulating SiC substrate.
4H-N Type SiC substrate has the maximum rugged n-type subtrate with predictable and repeatable values for resistivity. It is characterized by low thermal expansion and excellent temperature stability. This SiC substrate is ideal for challenging applications featuring high frequency operation with high thermal and electrical power.
Semi-Insulating SiC substrate has very low intrinsic base charge acceptor level. This type of SiC substrate is ideal for use as epitaxial substrate and for applications such as high-power switching devices, high-temperature sensors and high thermal stability.
We are proud to offer technical support and service for our Silicon Carbide Wafer products. Our team of experienced and knowledgeable professionals are available to assist you with any questions or queries you may have. We offer a range of services, including:
