Shenzhen Sai Collie Technology Co., Ltd. |
|
FDS6680A MOSFET Power Electronics
8-SOIC Package N-Channel Single N-Channel Logic Level PowerTrench®
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 9.5mOhm @ 12.5A, 10V | |
Vgs(th) (Max) @ Id | 3V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 5 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1620 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.5W (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | 8-SOIC | |
Package / Case |
General Description
This N-Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
These devices are well suited for low voltage and battery powered
applications where low in-line power loss and fast switching are
required.
Features
• 12.5 A, 30 V RDS(ON) = 9.5 mΩ @ VGS = 10 V RDS(ON) = 13 mΩ @ VGS
= 4.5 V
• Ultra-low gate charge
• High performance trench technology for extremely low RDS(ON)
• High power and current handling capability
Why buy from us >>> Fast / Safely / Conveniently
• SKL is a Stock keeper and trade company of Electronic components
.Our branches office include China, Hong Kong, Sigapore , Canada .
Offer business, service, resourcing and information for our global
member.
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Service >>>
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