Shenzhen Sai Collie Technology Co., Ltd. |
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BVSS138LT1G MOSFET Power Electronics - High-Performance Switching Solutions for Power Management Applications
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 5V | |
Rds On (Max) @ Id, Vgs | 3.5Ohm @ 200mA, 5V | |
Vgs(th) (Max) @ Id | 1.5V @ 1mA | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 50 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 225mW (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | SOT-23-3 (TO-236) |
Product Listing:
ON Semiconductor BVSS138LT1G N-Channel Power MOSFET
Features:
• Low RDS(on) for Efficiency
• Low Gate Charge for Faster Switching
• Fast Intrinsic Diode for Ease of Parallel Operation
• Fully Characterized Avalanche Voltage and Current
• High Current Handling Capability
• RoHS Compliant
Specifications:
• VDS (V): 20
• RDS (on) (Ω): 0.0045
• ID (A): 20
• Qg (Max) (nC): 15
• VGS (V): 10
• Qgs (nC): 4
• Qgd (nC): 10
• Ciss (pF): 4650
• Coss (pF): 880
• Crss (pF): 150
• Package/Case: SOT-23-3