Shenzhen Sai Collie Technology Co., Ltd. |
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MOSFET Power Electronics MMBF170 High-Performance Low-Voltage Switching for Heavy-Duty Applications
FET Type | ||
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 5Ohm @ 200mA, 10V | |
Vgs(th) (Max) @ Id | 3V @ 1mA | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 40 pF @ 10 V | |
FET Feature | - | |
Power Dissipation (Max) | 300mW (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | SOT-23-3 | |
Package / Case |
Product Listing:
ON Semiconductor MMBF170 N-Channel Enhancement Mode Power MOSFET
Features:
• Low On-Resistance
• Low Input and Output Capacitance
• Fast Switching Speed
• High Gain
• Low Threshold Voltage
• Low Gate Charge
Specifications:
• Transistor Polarity: N-Channel
• Drain to Source Voltage (Vdss): 30V
• Gate to Source Voltage (Vgs): 20V
• Current – Continuous Drain (Id) @ 25°C: 17A
• Power Dissipation (Pd): 150W
• Drain to Source Resistance Rds(on): 0.0045Ω
• Input Capacitance (Ciss) @ Vds: 300pF
• Output Capacitance (Coss) @ Vds: 70pF
• Switching Time (tON): 5ns
• Switching Time (tOFF): 10ns
• Operating Temperature Range: -55°C to +150°C