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pyroelectric free linbo3 substrate

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Results forpyroelectric free linbo3 substratefrom 676 Products.
5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type Free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Different Types of Generative ...
Shanghai, china
Verified
2inch GaN substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size ...
Shanghai, china
Verified
2inch GaN substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer,Free-standing GaN Substrates by Customized size,small size ...
Shanghai, china
Verified
Product Description: Aluminum Nitride Ceramic Product Overview GaN-on-QST is provided by Qromis Company of the United States, which can be used as a silicon substrate or a seed ...
Jiangsu, china
Verified
Chemistry Free Green Printing Thermal CTP Plate Brief introduction Process Free Thermal CTP Plate is a negative working CTP plate. It does not require processing procedures, which ...
Zhejiang, china
Verified
50mm Sapphire Substrate Wafer Thk 430μm OF Length (Mm) 16 LED Chip JDCD08-001-001 Diameter 50mm Sapphire substrate wafer , Thk 430μm, crystal orientation C/M0.2, OF length (mm) 16 ...
Shanghai, china
Verified
2inch free-standing GaN substrates,GaN wafer for LD,semiconducting Gallium Nitride Wafer for led,GaN template,10x10mm GaN substrates, native GaN wafer, GaN Applications GaN can be ...
Shanghai, china
Verified
Thermal Negative CTP Plate Chemistry Free Offset Printing Plate 1. Application EcooGraphix ECOO-G is a new, environmentally friendly, Development On Press CTP plate. It can be run ...
Zhejiang, china
Verified
3*3mm²*0.3mm Electronic Grade Single Crystal Diamond,N Content<100ppb, XRD<0.015º For Heat Sink Overview After nearly 4 decades of stop-start research into CVD diamond growth, ...
Shanghai, china
Verified
4inch HVPE method Gallium Nitride GaN wafer ,free standing GaN substrates for LED applicaion,10x10mm size GaN chips,HVPE GaN wafer About GaN-on-GaN Feature Introduce Vertical GaN ...
Shanghai, china
Verified
10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM<350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating ...
Shanghai, china
Verified
5*10mm2 SP-face (10-11) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Now a new material called Gallium Nitride (GaN) has the ...
Shanghai, china
Verified
5*10mm2 SP-face (20-21)/(20-2-1) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview A generative adversarial ...
Shanghai, china
Verified
2-inch Free-standing U-GaN/SI-GaN Substrates 50.8 ± 1 mm 350 ± 25 μm 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device...
Shanghai, china
Verified
50.8 ± 1 mm 2-inch Free-standing U-GaN/SI-GaN Substrates (1-100) ± 0.5o, 16 ± 1 mm 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm ...
Shanghai, china
Verified
JDCD04-001-005 10x15mm2(-201)UID-Doped Free-Standing Ga2O3 Single Crystal Substrate Product Grade Single Polishing 10x15mm2(-201)UID-doped free-standing Ga2O3 single crystal ...
Shanghai, china
Verified
5*10.5mm2 SP-face (10-11) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Generative adversarial networks (GANs) are ...
Shanghai, china
Verified
5*10mm2 SP-face (10-11) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview GaN has many serious advantages over ...
Shanghai, china
Verified
5*10mm2 SP-face (11-12) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device Overview Since the 1990s, it has been used commonly in light ...
Shanghai, china
Verified
5*10mm2 SP-face (11-12) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Because GaN transistors are able to ...
Shanghai, china
Verified
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