Results forpyroelectric free linbo3 substratefrom 677 Products.
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10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating ...
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COB LED Strip Light 528led/m Free-Cut Design DC12V Flexibility Spotless Seamless IP20 Rated Strip Light Description LED COB light strip is a new type of integrated light source ...
china
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Electrolytic Tinplate Coils Tin Free Steel Sheet Food Tinplate Coil Bright/Stone/Silver finish with passivation treatmen Electro Tin Plated (ETP) is a cold rolled thin carbon steel ...
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HDI IC Substrate Fast Turn Custom PCB Circuit Board Manufacturer PCB information: Material: Mitsubishi Gas halogen free BT hl832nx-a-hs Minimum line width / line spacing: 30 / 30um ...
china
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2inch GaN substrates template,GaN wafer for LeD,semiconducting Gallium Nitride Wafer for ld,GaN template, mocvd GaN Wafer, GaN Specifications/Special Features: Gallium nitride (GaN...
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Super Durable Polyester Powder Coating , Silver Powder Coat For Metal Substrate Product Description 1. What is Powder Coating? Powder coating is a type of coating that is applied ...
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Structure Electrical Alumina Insulation Macor Machinable Ceramic Substrate 1.Product description Machinable Glass Ceramic has a continuous use temperature of 800C and a peak ...
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10x10mm2(010)Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.5nm Resistance 1.53E+18Ω/cm-3 Optoelectron...
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2inch HVPE method Gallium Nitride GaN wafer ,free standing GaN substrates for LED applicaion,10x10mm size GaN chips,HVPE GaN wafer About GaN Feature Introduce The growing demand ...
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5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Gallium nitride (GaN) is a very hard, mechanicall...
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5*10mm2 M-face Un-doped n-type Free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Various physical aspects and potential applicatio...
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Ga2O3 Single Crystal Substrate Thickness 0.6~0.8mm FWHM<350arcsec 10x15mm2(-201)UID-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6...
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Single side polished Ga2O3 Single Crystal Substrate Thickness 0.6~0.8mm 10x15mm2(010)Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness ...
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FWHM<350arcsec Ga2O3 Wafer Single Crystal Substrate Thickness 0.6~0.8mm 10x15mm2(010)Sn-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness ...
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2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be ...
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2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview GaN has excellent material characteristics for use ...
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5-inch silicon wafer MEMS devices, integrated circuits,dedicated substrates for discrete devices Overview Although silicon crystals may look metallic, they are not entirely metals. ...
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10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating ...
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10x10mm2 (-201) Fe-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.3 nm Optoelectronic devices, insulating ...
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10x15mm2(-201)UID-doped free-standing Ga2O3 single crystal substrate Product grade single polishing Thickness 0.6~0.8mm FWHM＜350arcsec,Ra≤0.5nm Resistance 4.13E+17Ω/cm-3 Optoelectr...
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