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n type gan gallium nitride

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8INCH 12INCH 6INCH GAN-ON-SI EPI-WAFERS FOR FOR POWER RF LED application GaN epitaxial wafer (GaN EPI on Silicon) ZMSH is an agent of GaN-on-Si epitaxial wafers in Shanghia. ...
Shanghai, china
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5*10mm2 SP-face (10-11) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Now a new material called Gallium Nitride (GaN) has the ...
Shanghai, china
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2inch 5um thickness AlN Aluminum Nitride Template on 430um sapphire/ 350um Sic substrates AlN Wafer Characteristic III-Nitride(GaN,AlN,InN) 2inch AlN template on sapphire or sic ...
Shanghai, china
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B2inch GaN-ON-GaN Blue Green Micro-LED epi wafers on free-standing GaN substrates 2inch GaN-ON-GaN PIN wafers on free-standing GaN substrates About GaN-on-GaN Feature Introduce ...
Shanghai, china
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5*10mm2 Free-Standing GaN Single Crystal Substrate (20-21)/(20-2-1) Un-Doped SI-Type 5*10mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate ...
Shanghai, china
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2inch 4inch 4" 2'' Sapphire based GaN templates GaN film on the sapphire substrate GaN-On-Sapphire GaN wafers GaN substrates GaN windows Properties of GaN 1) At room temperature, ...
Shanghai, china
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B2inch GaN-ON-GaN Blue Green Micro-LED epi wafers on free-standing GaN substrates 2inch GaN-ON-GaN PIN wafers on free-standing GaN substrates GaN on GaN In a GaN on GaN vertical ...
Shanghai, china
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10*10.5mm² C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser Overview GaN Substrates GaN (gallium nitride) substrates and ...
Shanghai, china
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5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Gallium Nitride (GaN) substrate is a high...
Shanghai, china
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5*10mm2 SP-face (11-12) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device Overview Since the 1990s, it has been used commonly in light ...
Shanghai, china
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4inch GaN-On-Sapphire Blue/Green LED Wafer Flat Sapphire 100 ± 0.2 mm 4 inch Blue LED GaN epitaxial wafer on sapphire SSP The key ingredient for blue LEDs is gallium nitride, a ...
Shanghai, china
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2inch Blue-LED GaN on silicon wafer Gallium Nitride is a semiconductor technology used for high power, high-frequency semiconductor applications. Gallium Nitride exhibits several ...
Shanghai, china
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2inch Green-LED GaN on silicon wafer Overview Gallium Nitride is a semiconductor technology used for high power, high-frequency semiconductor applications. Gallium Nitride exhibits ...
Shanghai, china
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2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices Overview Gallium Nitride (GaN) epitaxial wafers (epi-wafers). GaN high...
Shanghai, china
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5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Power density is greatly improved in gallium ...
Shanghai, china
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10*10.5mm2 C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview We sell directly from the factory, and therefore can ...
Shanghai, china
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2-inch Free-standing U-GaN/SI-GaN Substrates 50.8 ± 1 mm 350 ± 25 μm 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device...
Shanghai, china
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5*10mm2 SP-face (20-21)/(20-2-1) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Gallium Nitride (GaN) substrate ...
Shanghai, china
Verified
5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Gallium nitride (GaN) is a very hard, mechanicall...
Shanghai, china
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5*10.5mm2 A Face Free-Standing GaN Substrates Thickness 350 ±25 µm 5*10.5mm2 A-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices ...
Shanghai, china
Verified
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