Results forn type gan gallium nitridefrom 41 Products.
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5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Power density is greatly improved in gallium ...
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10*10.5mm2 C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview We sell directly from the factory, and therefore can ...
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2-inch Free-standing U-GaN/SI-GaN Substrates 50.8 ± 1 mm 350 ± 25 μm 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device...
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5*10mm2 SP-face (20-21)/(20-2-1) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Gallium Nitride (GaN) substrate ...
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5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Gallium nitride (GaN) is a very hard, mechanicall...
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5*10.5mm2 A Face Free-Standing GaN Substrates Thickness 350 ±25 µm 5*10.5mm2 A-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices ...
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10*10.5mm2 C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Gallium Nitride (GaN) substrate is a high...
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4 inch P-type Mg-doped GaN on sapphire wafer SSP resistivity~10Ω cm LED, laser, PIN epitaxial wafer Why Use GaN Wafers? Gallium Nitride on sapphire is the ideal material for radio ...
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2-Inch Free-Standing N-GaN Substrates N Face Surface Roughness 0.5 ~1.5 μm (Single Side Polished) 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivit...
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10*10.5mm² C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser Overview Gallium Nitride (GaN) substrate is a high-quality ...
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5*10mm2 A-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Thin Epi wafers are commonly used for leading edge MOS ...
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5*10mm2 M-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Thin Epi wafers are commonly used for leading edge MOS ...
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GaN IC IGLR60R190D1XUMA1 N-Channel 600V Enhancement Mode Power Transistor Product Description Of IGLR60R190D1XUMA1 IGLR60R190D1XUMA1 is N-Channel 600V Enhancement Mode Power ...
china
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GaN IC IGLD60R190D1AUMA1 N-Channel CoolGaN Power Transistor 8-LDFN Surface Mount Product Description Of IGLD60R190D1AUMA1 IGLD60R190D1AUMA1 is N-Channel CoolGaN power transistor...
china
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Mini PD QC Fast Charging 65W GaN Wall Charger EU Plus Universal Charger Products Features 1, The macebook will be changed full about 90 minuties 2, High efficiency charging& Low ...
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Freestanding GaN Substrate, N Type, Semi-Insulating For Rf,Power,Led And Ld Freestanding GaN substrate PAM-XIAMEN has established the manufacturing technology for freestanding ...
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65W GaN USB-C Power Adapter 1Port PD65W PPS 45W For Type-C Laptops MacBook IPad Samsung,1port QC3.0/SCP For HUAWEI Full output High efficiency IC Fast charging ●110-240V wide ...
china
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65W GaN USB-C Power Adapter 1Port PD65W PPS 45W For Type-C Laptops MacBook IPad Samsung,1port QC3.0/SCP For HUAWEI Full output High efficiency IC Fast charging ●110-240V wide ...
china
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100w Usb C PD Compact Charger With Gan Smallest Pd Wall Charger Usb C Power Adapter PD 3.0 Wall Charger Type-C Laptop Overview 100W Gan Charger USB C wall charger utilizes the ...
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100w Usb C PD Compact Charger With Gan Smallest Pd Wall Charger Usb C Power Adapter PD 3.0 Wall Charger Type-C Laptop Overview 100W Gan Charger USB C wall charger utilizes the ...
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