SHANGHAI FAMOUS TRADE CO.,LTD |
Verified Suppliers
|
|
8INCH 12INCH 6INCH GAN-ON-SI EPI-WAFERS FOR FOR POWER RF LED application
GaN epitaxial wafer (GaN EPI on Silicon)
ZMSH is an agent of GaN-on-Si epitaxial wafers in Shanghia.
Gallium nitride (GaN) has been widely used in power devices and
blue light-emitting diodes due to its wide energy gap.
Introduction
There is a growing need for energy saving and advancements in
information and communication systems. To meet these needs, we have
developed a wide-bandgap semiconductor substrate with gallium
nitride (GaN) as the next-generation semiconductor material.
Concept: By growing single-crystal GaN thin films on silicon
substrates, we can produce large, inexpensive semiconductor
substrates for next-generation devices
.
Target: For home appliances: switchgears and inverters with
breakdown voltages in the hundreds. For mobile phone base stations:
high power and high frequency transistors.
Advantages: Our silicon substrates are cheaper to grow GaN than
other silicon carbide or sapphire substrates, and we can provide
GaN devices tailored to customer requirements.
Glossary
wide band gap
Band gap refers to the energy field formed by the band structure in
a crystal that does not contain electrons (semiconductor materials
with a band gap larger than silicon are often referred to as wide
band gap semiconductors). Wide-bandgap material with good optical
transparency and high electrical breakdown voltage
Heterojunction
is a stack of different materials. Generally speaking, in the
semiconductor field, relatively thin films of semiconductor
materials with different compositions are stacked. In the case of
mixed crystals, heterojunctions with atomically smooth interfaces
and good interface properties are obtained. Due to these
interfaces, a layer of two-dimensional electron gas with high
electron mobility is created