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GaN IC IGLD60R190D1AUMA1 N-Channel CoolGaN Power Transistor 8-LDFN Surface Mount
Product Description Of IGLD60R190D1AUMA1
IGLD60R190D1AUMA1 is N-Channel CoolGaN power transistor,the package is 8-LDFN surface mount.
Specification Of IGLD60R190D1AUMA1
FET Type | N-Channel |
Technology | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 600 V |
Current - Continuous Drain (Id) @ 25°C | 10A (Tc) |
Vgs(th) (Max) @ Id | 1.6V @ 960µA |
Vgs (Max) | -10V |
Input Capacitance (Ciss) (Max) @ Vds | 157 pF @ 400 V |
Power Dissipation (Max) | 62.5W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Feature Of IGLD60R190D1AUMA1
Ultra fast switching
No reverse-recovery charge
Capable of reverse conduction
Low gate charge, low output charge
Applications Of IGLD60R190D1AUMA1
SMPS and high density chargers based on the half-bridge topology (half-bridge topologies for hard and soft switching such as Totem pole PFC,high frequency LLC and flyback).
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FAQ
Q: Are your products original?
A: Yes, all products are original, new original import is our
purpose.
Q: Which Certificates do you have?
A: We are ISO 9001:2015 Certified Company and member of ERAI.
Q: Can you support small quantity order or sample?Is the sample
free?
A: Yes,we support sample order and small order.Sample cost is
different according to your order or project.
Q: How to ship my order? Is it safe?
A: We use express to ship,such as DHL,Fedex,UPS,TNT,EMS.We can also
use your suggested forwarder.Products will be in good packing and
ensure the safety and we are responsible to product damage to your
order.
Q: What about the lead time?
A: We can ship stock parts within 5 working days.If without
stock,we will confirm lead time for you based on your order
quantity.