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ipg20n06s4l14aatma1 power transistor

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IPG20N06S4L14AATMA1 Power Transistor N Channel MOSFET 40V 60V OptiMOS-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to ...
china
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D2085UK 28V120W 1MHz-1000MHz push-pull RF POWER TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a ...
Guangdong, china
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TIP42C PNP 100V 6A TO-220 Power Transistor MOSFET Transistors for Switch Circuit TIP41C TIP42C Description The TIP41C is a base island technology NPN power transistor in TO-220 ...
Guangdong, china
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Low Gate Charge Mosfet Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field ...
china
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IGBT Power Transistor SGL160N60UFD 600V 160A 250W UFD Series Gate Bipolar Transistors Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low ...
Guangdong, china
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Introducing the FQPF18N60C - The Ultimate Power Transistor for Your Electronic Projects Unleash the Power of FQPF18N60C - Ideal for High Voltage and High Current Applications ...
china
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TIP137 Logic New Original Bipolar NPN 100V 6A TO220 Power Transistor Triode TIP137 Product Paramenters Manufacturer: Standard Packaging: Tube Product Category: MOSFET Brand: ...
china
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Vishay Discrete RF Power Transistor Trans MOSFET SI7615ADN-T1-GE3 Product Specifications:SI7615ADN.pdf SI7615ADN-T1-GE3 Specifications Part Status Active FET Type P-Channel ...
china
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SC-101E Power Transistor Lead Forming Machine Usage: This machine is used to form/bend power transistor, including TO-92, TO-126, TO-3P, TO-220, etc Specifications: Voltage:220V ...
china
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800V CoolMOSTM CE Power Transistor IPA80R1K4CE Field Effect Transistor Description CoolMOS™ CE is a revolutionary technology for high voltage power MOSFETs. The high voltage ...
Guangdong, china
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Product Description: High Power IGBT (Insulated Gate Bipolar Transistor) is a high power gate bipolar transistor with high current density, fast switching speed and high power ...
Guangdong, china
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650V Transistors IMW65R030M1H N-Channel SiC Trench Power Transistors TO-247-3​ Product Description Of IMW65R030M1H IMW65R030M1H is 650V CoolSiC M1 SiC Trench Power Device, it is ...
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Product Range Igbt Power Module Transistors NGTB40N120SWG Charging Pile Inverter Welding Chip App Characteristics TJmax = 175°C • Soft Fast Reverse Recovery Diode Optimized for ...
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PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed ...
HongKong, china
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Black Insulated Gate Bipolar Transistor Normal Temperature Product Description: An Insulated Gate Bipolar Transistor (IGBT) is a new and versatile electronic device with insulated ...
china
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IXYK110N120A4 IGBT PT 1200 V 375 A 1360 W Through Hole TO-264 (IXYK) IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs are developed using a ...
china
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51199930-100 51199930100 Honeywell Power Transistor Devices ⇒ Click here for good price 51199930-100 Brand/Manufacturer Honeywell /USA Part Number 51199930-100 Alternate Part ...
Fujian, china
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In Stock Electronic Component IC Chips XC226796F80LACKXUMA1 SAK-XC2267-96F80L AC We Just offer NEW & ORIGINAL items , should any of these items be of interest to you, please let us ...
Guangdong, china
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PBSS4160T NPN low VCEsat transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current ...
Guangdong, china
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