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power transistor and igbt 1200v

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IKW25N120T2,1200 V, 25 A IGBT discrete with anti-parallel diode in TO-247 package Insulated Gate Bipolar Transistor IKW25N120T2 K25T1202 1200V 25A Igbt Transistors Description 1200 ...
Guangdong, china
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Product Description: High Power IGBT (Insulated Gate Bipolar Transistor) is a high power gate bipolar transistor with high current density, fast switching speed and high power ...
Guangdong, china
Verified
7MBR15SA120B is a IGBT(1200V/15A/PIM) . Part NO: 7MBR15SA120B Brand: FUJITSU Date Code: 05+ Quality Warranty: 3 Months Mounting Type: Screws Overview We specialize in high power ...
china
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D2085UK 28V120W 1MHz-1000MHz push-pull RF POWER TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a ...
Guangdong, china
Verified
IXYK110N120A4 IGBT PT 1200 V 375 A 1360 W Through Hole TO-264 (IXYK) IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs IXYS Trench 650V to 1200V XPT™ GenX4™ IGBTs are developed using a ...
china
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Siemens 6SY7000-0AE73 S SIMOVERT MASTER DRIVES IGBT TRANSISTOR MODULE 300A 1200V Descripition Part Number 6SY7000-0AE73 Manufacturer / Brand SIEMENS Category Discrete Semiconductor ...
Guangdong, china
Verified
IR2110PBF power MOSFET and IGBT drivers Ic Chip Half-Bridge Gate Driver IC 14-DIP Description The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with ...
Guangdong, china
Member
IRG7PH42UDPBF IGBT Power Module Transistors IGBTs Single IRG7PH42UDPBF Specifications Part Status Active IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 1200V Current ...
china
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Automotive IGBT Modules FF50R12RT4 IGBT 1200V 50A Transistors Modules Chassis Mount [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent ...
china
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Solid Power-DS- SPS50P12M2M4-S04040005 V1.0 1200V 50A IGBT PIM Module 1200V 50A IGBT PIM Features: 1200V Trench+ Field Stop technology Freewheeling diodes with fast and soft ...
Jiangsu, china
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Infineon FF50R12RT4 well-known 34 mm 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled Typical Applications • High Power Converters • Motor Drives • ...
Guangdong, china
Verified
ODM Through Hole IGBT 1200V 30A 235W IKW15N120T2 PG-TO247-3 IKW15N120T2 Specifications Part Status Active IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 1200V Current ...
china
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FGA25N120ANTD/FGA25N120ANTD_F109 1200V NPT Trench IGBT Features • NPT Trench Technology, Positive temperature coefficient • Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A ...
Guangdong, china
Member
Discover the Pros and Cons of IRG4IBC30S Before Investing Your Money Is IRG4IBC30S the Right Choice for Your Electronics Needs? If you're looking for a powerful Insulated Gate ...
china
Verified
IGBT Transistor Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode Product Description: Insulated Gate Bipolar Transistor – High Quality and General Purpose ...
china
Verified
FF300R12KT4 IGBT Modules IGBT 1200V 300A PART NO Ic(A) Vce(sat) ton toff Rth(j-c) Pc (W) PACKAGING Tc=80℃ Max(V) (us) (us) K/W BSM50GB60DLC 50 2.45 0.04 0.12 0.44 280 34mm ...
Guangdong, china
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FF300R12KT4 IGBT Modules IGBT 1200V 300A List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND PART NUMBER MFG/BRAND 88E3019-A0-NAJ2C000 MARVELL CX28380-16 MNDSPEED ...
Guangdong, china
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Low Gate Charge Mosfet Power Transistor For Inverter Systems Management What is a Mosfet Power Transistor ? A power MOSFET is a special type of metal oxide semiconductor field ...
china
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STGIPS20K60 Power Driver Module IGBT Power DIP Module Discrete Semiconductor IGBT intelligent power module (IPM) 18 A, 600 V, DBC isolated SDIP-25L molded Power Driver Module IGBT ...
HongKong, china
Verified
TIP137 Logic New Original Bipolar NPN 100V 6A TO220 Power Transistor Triode TIP137 Product Paramenters Manufacturer: Standard Packaging: Tube Product Category: MOSFET Brand: ...
china
Verified
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