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[China]
Address: #506B, Henghui Business Center, No.77, Lingxia Nan Road, High Technology Zone, Huli, Xiamen 361006, China
Contact name:
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD. |
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4H High Purity Semi Insulating SiC Wafer, Research Grade,3”Size
PAM-XIAMEN offers semiconductor silicon carbide wafers,6H SiC and 4H SiC in different quality grades for researcher and industry manufacturers. We has developed SiC crystal growth technology and SiC crystal wafer processing technology,established a production line to manufacturer SiCsubstrate,Which is applied in GaNepitaxydevice,powerdevices,high-temperature device and optoelectronic Devices. As a professional company invested by the leading manufacturers from the fields of advanced and high-tech material research and state institutes and China’s Semiconductor Lab,weare devoted to continuously improve the quality of currently substrates and develop large size substrates.
Here shows detail specification:
SILICON CARBIDE MATERIAL PROPERTIES
| Polytype | Single Crystal 4H | Single Crystal 6H |
| Lattice Parameters | a=3.076 Å | a=3.073 Å |
| c=10.053 Å | c=15.117 Å | |
| Stacking Sequence | ABCB | ABCACB |
| Band-gap | 3.26 eV | 3.03 eV |
| Density | 3.21 · 103 kg/m3 | 3.21 · 103 kg/m3 |
| Therm. Expansion Coefficient | 4-5×10-6/K | 4-5×10-6/K |
| Refraction Index | no = 2.719 | no = 2.707 |
| ne = 2.777 | ne = 2.755 | |
| Dielectric Constant | 9.6 | 9.66 |
| Thermal Conductivity | 490 W/mK | 490 W/mK |
| Break-Down Electrical Field | 2-4 · 108 V/m | 2-4 · 108 V/m |
| Saturation Drift Velocity | 2.0 · 105 m/s | 2.0 · 105 m/s |
| Electron Mobility | 800 cm2/V·S | 400 cm2/V·S |
| hole Mobility | 115 cm2/V·S | 90 cm2/V·S |
| Mohs Hardness | ~9 | ~9 |
4H High Purity Semi Insulating SiC Wafer, Research Grade,3”Size
| SUBSTRATE PROPERTY | S4H-51-SI-PWAM-250 S4H-51-SI-PWAM-330 S4H-51-SI-PWAM-430 |
| Description | Research Grade 4H SEMI Substrate |
| Polytype | 4H |
| Diameter | (50.8 ± 0.38) mm |
| Thickness | (250 ± 25) μm (330 ± 25) μm (430 ± 25) μm |
| Resistivity (RT) | >1E5 Ω·cm |
| Surface Roughness | < 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish) |
| FWHM | <50 arcsec |
| Micropipe Density | A+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2 |
| Surface Orientation | |
| On axis <0001>± 0.5° | |
| Off axis 3.5° toward <11-20>± 0.5° | |
| Primary flat orientation | Parallel {1-100} ± 5° |
| Primary flat length | 16.00 ± 1.70 mm |
| Secondary flat orientation Si-face:90° cw. from orientation flat ± 5° | |
| C-face:90° ccw. from orientation flat ± 5° | |
| Secondary flat length | 8.00 ± 1.70 mm |
| Surface Finish | Single or double face polished |
| Packaging | Single wafer box or multi wafer box |
| Usable area | ≥ 90 % |
| Edge exclusion | 1 mm |
SiC crystal application
Many researchers know the general SiCapplication:III-V Nitride Deposition;OptoelectronicDevices;High Power Devices;High Temperature Devices;High Frequency Power Devices.But few people knows detail applications, We list some detail application and make some explanations.
Because of SiC physical and electronic properties,silicon carbide
based device are well suitable for short wavelength optoelectronic,
high temperature, radiation resistant, and
high-power/high-frequency electronic devices,compared with Si and
GaAs based device.
Many researchers know the general SiC application:III-V Nitride
Deposition;Optoelectronic Devices;High Power Devices;High
Temperature Devices;High Frequency Power Devices.But few people
knows detail applications, here we list some detail application and
make some explanations:
1. SiC substrate for X-ray monochromators:such as,using SiC's large
d-spacing of about 15 A;
2. SiC substrate for high voltage devices;
3. SiC substrate for diamond film growth by microwave
plasma-enhanced chemical vapor deposition;
4. For silicon carbide p-n diode;
5. SiC substrate for optical window: such as for very short (<
100 fs) and intense (> 100 GW/cm2) laser pulses with a
wavelength of 1300 nm. It should have a low absorption coefficient
and a low two photon absorption coefficient for 1300 nm.
6. SiC substrate for heat spreader: For example,the Silicon carbide
crystal will be capillary bonded on a flat gain chip surface of
VECSEL (Laser) to remove the generated pump heat. Therefore, the
following properties are important:
1) Semi-insulating type required to prevent free carrier absorption
of the laser light;
2) Double side polished are preferred;
3) Surface roughness: < 2nm, so that the surface is enough flat
for bonding;
7. SiC substrate for THz system application: Normally it require
THz transparency
8. SiC substrate for epitaxial graphene on SiC:Graphene epitaxy on
off axis substrate and on axis are both available, surface side on
C-face or Si face are both available.
9. SiC substrate for process development loke ginding, dicing and
etc
10. SiC substrate for fast photo-electric switch
11. SiC substrate for heat sink: thermal conductivity and thermal
expansion are concerned.
12. SiC substrate for laser: optical, surface and stranparence are
concerned.
13. SiC substrate for III-V epitaxy, normally off axis substrate
are required.
Xiamen Powerway Advanced Material Co.,Limited is an expert in SiC substrate, he can give researchers suggestions in different application
SiC Device Fundamentals
To minimize the development and production costs of SiC electronics, it is important that SiC device fabrication takes advantage of existing silicon and GaAs wafer processing infrastructure as much as possible. As will be discussed in this section, most of the steps necessary to fabricate SiC electronics starting from SiC wafers can be accomplished using somewhat modified commercial silicon electronics processes and fabrication tools.
