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3”Size 4H Semi-Insulating SiC Epi Ready Wafer in Research Grade for Graphene Epitaxial Growth

XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
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XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.

3”Size 4H Semi-Insulating SiC Epi Ready Wafer in Research Grade for Graphene Epitaxial Growth

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Product Details

3”Size 4H Semi-Insulating SiC Epi Ready Wafer in Research Grade for Graphene Epitaxial Growth

 

PAM-XIAMEN provides high quality single crystal SiC (Silicon Carbide)wafer for electronic and optoelectronic industry. SiC wafer is a next generation semiconductor materialwith unique electrical properties and excellent thermal properties for high temperature and high power device application. SiC wafer can be supplied in diameter 2~6 inch, both 4H and 6H SiC , N-type , Nitrogen doped , and semi-insulating type available.

 

Epitaxial growth of graphene on silicon carbide (SiC)

 

I. To fabricate and test electronic devices made from graphene on silicon carbide (SiC) substrates, it needs high-quality graphene to be processed. And to get qualified graphene, it needs qualified SiC substrate.

II. If the required wafers will be used to fabricate high-quality epitaxial graphene by annealing small sections of the wafer in Argon gas background, the quality of the wafers is critical, as are the surface finish (chemical-mechanical epitaxial grade polish) and miscut relative to the basal crystal plane of 4H-SiC(0001).
III. 100 mm diameter SiC substrates with the following technical requirements:

2. 100% Semi-insulating SiC wafers of 100 mm diameter with minimum crystal defects

3. 100% high-purity on-axis type single-crystal 4H-SiC(0001) with no intentional doping.

4. Surface oriented parallel to the (0001) crystal plane to within 0.10 degree.

5. SiC(0001) surface is Epi-Ready polished substrate on which graphene can be grown.

6. Wafer bow is less than 25 micrometers for each wafer.

 

 

Please contact us for more information:

SILICON CARBIDE MATERIAL PROPERTIES

PolytypeSingle Crystal 4HSingle Crystal 6H
Lattice Parametersa=3.076 Åa=3.073 Å
 c=10.053 Åc=15.117 Å
Stacking SequenceABCBABCACB
Band-gap3.26 eV3.03 eV
Density3.21 · 103 kg/m33.21 · 103 kg/m3
Therm. Expansion Coefficient4-5×10-6/K4-5×10-6/K
Refraction Indexno = 2.719no = 2.707
 ne = 2.777ne = 2.755
Dielectric Constant9.69.66
Thermal Conductivity490 W/mK490 W/mK
Break-Down Electrical Field2-4 · 108 V/m2-4 · 108 V/m
Saturation Drift Velocity2.0 · 105 m/s2.0 · 105 m/s
Electron Mobility800 cm2/V·S400 cm2/V·S
hole Mobility115 cm2/V·S90 cm2/V·S
Mohs Hardness~9~9

 

4H Semi-Insulating SiC Wafer, Research Grade,3”Size

SUBSTRATE PROPERTYS4H-51-SI-PWAM-250 S4H-51-SI-PWAM-330 S4H-51-SI-PWAM-430
DescriptionResearch Grade 4H SEMI Substrate
Polytype4H
Diameter(50.8 ± 0.38) mm
Thickness(250 ± 25) μm (330 ± 25) μm (430 ± 25) μm
Resistivity (RT)>1E5 Ω·cm
Surface Roughness< 0.5 nm (Si-face CMP Epi-ready); <1 nm (C- face Optical polish)
FWHM<50 arcsec
Micropipe DensityA+≤1cm-2 A≤10cm-2 B≤30cm-2 C≤50cm-2 D≤100cm-2
Surface Orientation
On axis <0001>± 0.5°
Off axis 3.5° toward <11-20>± 0.5°
Primary flat orientationParallel {1-100} ± 5°
Primary flat length16.00 ± 1.70 mm
Secondary flat orientation Si-face:90° cw. from orientation flat ± 5°
C-face:90° ccw. from orientation flat ± 5°
Secondary flat length8.00 ± 1.70 mm
Surface FinishSingle or double face polished
PackagingSingle wafer box or multi wafer box
Usable area≥ 90 %
Edge exclusion1 mm

 

 

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