Active Member
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[China]
Address: #506B, Henghui Business Center, No.77, Lingxia Nan Road, High Technology Zone, Huli, Xiamen 361006, China
Contact name:
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD. |
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P Type , GaSb Wafer , 4”, Test Grade -Powerway Wafer
PAM-XIAMEN offers GaSb wafer – Gallium Antimonide which are grown by LEC(Liquid Encapsulated Czochralski) as epi-ready or mechanical grade with n type, p type or undoped in different orientation(111)or(100).Gallium antimonide (GaSb) is a crystalline compound made from the elements Gallium (Ga) and antimony (Sb).
4" GaSb Wafer Specification
| Item | Specifications |
| Dopant | Zinc |
| Conduction Type | P-type |
| Wafer Diameter | 4" |
| Wafer Orientation | (100)±0.5° |
| Wafer Thickness | 800±25um |
| Primary Flat Length | 32.5±2.5mm |
| Secondary Flat Length | 18±1mm |
| Carrier Concentration | (5-100)x1017cm-3 |
| Mobility | 200-500cm2/V.s |
| EPD | <2x103cm-2 |
| TTV | <15um |
| BOW | <15um |
| WARP | <20um |
| Laser marking | upon request |
| Suface finish | P/E, P/P |
| Epi ready | yes |
| Package | Single wafer container or cassette |
Band structure and carrier concentration of GaSb Wafer include Basic Parameters,Elastic constants,Acoustic Wave Speeds,Phonon frequencies.
Basic Parameter
| Bulk modulus | 5.63·1011 dyn cm-2 |
| Density | 5.614 g cm-3 |
| Hardness on the Mohs scale | 4.5 |
| Surface microhardness (using Knoop's pyramid test) | 450 kg mm-2 |
| Cleavage plane | {100} |
| Piezoelectric constant | e14= -0.13 C m-2 |
C11= 8.83·1011 dyn cm-2
C12= 4.02·1011 dyn cm-2
C44= 4.32·1011 dyn cm-2
 | Temperature dependences of elastic constants. |
| Bulk modulus (compressibility-1) | Bs= 5.62·1011dyn cm-2 |
| Shear modulus | C'= 2.4·1011dyn cm-2 |
| [100] Young's modulus | Yo= 6.31·1011dyn cm-2 |
| [100] Poisson ratio | σo = 0.31 |
| Wave propagation Direction | Wave character | Expression for wave speed | Wave speed (in units of 105 cm/s) |
| [100] | VL | (C11/ρ )1/2 | 3.97 |
| VT | (C44/ρ)1/2 | 2.77 | |
| [100] | Vl | [(C11+Cl2+2C44)/2ρ]1/2 | 4.38 |
| Vt|| | Vt||=VT=(C44/ρ)1/2 | 2.77 | |
| Vt⊥ | [(C11-C12)/2ρ]1/2 | 2.07 | |
| [111] | Vl' | [(C11+2C12+4C44)/3ρ]1/2 | 4.50 |
| Vt' | [(C11-C12+C44)/3ρ]1/2 | 2.33 |
(in units of 1012 Hz)
| νLO(Γ15) | 6.87 | νTA(L3) | 1.37 |
| νTA(X5) | 1.70 | νLA(L1) | 4.60 |
| νLA(X3) | 4.99 | νLO(L1) | 6.15 |
| νTO(X5) | 6.36 | νTO(L3) | 6.48 |
| νLO(X1) | 6.35 |
Are You Looking for an GaSb substrate?
PAM-XIAMEN is proud to offer Gallium antimonide substrate for all different kinds of projects. If you are looking for GaSb wafers, send us enquiry today to learn more about how we can work with you to get you the GaSb wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!
