Active Member
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[China]
Address: #506B, Henghui Business Center, No.77, Lingxia Nan Road, High Technology Zone, Huli, Xiamen 361006, China
Contact name:
XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD. |
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P Type , GaSb Wafer , 3”, Test Grade -Powerway Wafer
PAM-XIAMEN manufactures high purity single crystal GaSb(Gallium Antimonide) Wafers Gallium antimonide (GaSb) is a semiconducting compound of gallium and antimony of the III-V family. It has a lattice constant of about 0.61 nm. It has a band gap of 0.67 eV. Our standard wafer diameters range from 1 inch to 4 inches, wafers can be produced in various thicknesses and different orientations (100),(111),(110) with polished wafers and blank wafers. PAM-XIAMEN can produce wide range grades: prime grade, test grade, dummy grade, mechanical grade, and optical grade. PAM-XIAMEN also offer GaSb material to customer specifications by request, in addition to custom compositions for commercial and research applications and new proprietary technologies.
3" GaSb Wafer Specification
| Item | Specifications |
| Conduction Type | P-type |
| Dopant | Zinc |
| Wafer Diameter | 3" |
| Wafer Orientation | (100)±0.5° |
| Wafer Thickness | 600±25um |
| Primary Flat Length | 22±2mm |
| Secondary Flat Length | 11±1mm |
| Carrier Concentration | (5-100)x1017cm-3 |
| Mobility | 200-500cm2/V.s |
| EPD | <2x103cm-2 |
| TTV | <12um |
| BOW | <12um |
| WARP | <15um |
| Laser marking | upon request |
| Suface finish | P/E, P/P |
| Epi ready | yes |
| Package | Single wafer container or cassette |
Optical properties of GaSb Wafer
| Index of refraction | 3.8 |
| Radiative recombination coefficient | ~ 10-10 cm3s-1 |
Infrared refractive index
n = k1/2≈3.71·(1+8.25·10-5T)
Long-wave TO phonon energy hνTO = 27.78 meV (300 K).
Long-wave LO phonon energy hνLO = 28.89 meV (300 K).
 | Refractive index n versus photon energy, 300 K |
 | Reflectivity versus photon energy, 300 K |
 | Intrinsic absorption coefficient near the intrinsic absorption edge
in pure p-type samples. T(K): 1. 300, 2. 77, 3. 4.2 |
 | Intrinsic absorption edge in p-type GaSb. Na = 3·1019 cm-3; T(K): 1. 215; 2. 140; 3. 77 |
 | Intrinsic absorption edge at 77 K for different doping levels,
p-GaSb. Na(cm-3): 1. 2.9·1017; 2. 5·1018; 3. 1.8·1019; 4. 3·1019 |
A ground state Rydberg energy RX1 = 2.8 meV.
 | The absorption coefficient versus photon energy, T=300 K |
 | The impurity absorption at low photon energies, T=80 K Undoped sample (p = 2.4·1017 cm-3 at 300 K) Te added (p = 7.5·1016 cm-3) Se added (p = 4.1·1016 cm-3) |
Are You Looking for an GaSb substrate?
PAM-XIAMEN is proud to offer Gallium antimonide substrate for all different kinds of projects. If you are looking for GaSb wafers, send us enquiry today to learn more about how we can work with you to get you the GaSb wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!
