Results forgan led epi waferfrom 753 Products.
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5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Gallium Nitride (GaN) substrate is a high...
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Ti+ Al2O3 crystal rod lens Ruby ruby glass ball,color sapphire laser crystal glass lens,polished ruby rod lensRuby optical glass,Titanium sapphire optical lens,Titanium sapphire ...
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Product Description: The easy-to-use Drag and Drop programming interface of the Automated Optical Inspection Machine allows for effortless and efficient inspection programming. ...
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ZnO Wafer, CdS wafer, CdSe wafer, CdTe wafer, ZnS wafer, ZnSe wafer and ZnTe wafer We provides high purity single crystal ZnO wafer and ZnO bulk for power device , LED , sensor and ...
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10*10.5mm2 C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview We sell directly from the factory, and therefore can ...
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customzied size MPCVD method GaN&Diamond Heat Sink wafers for Thermal management area GaN is widely used in radio frequency, fast charging and other fields, but its performance and ...
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ZnO Wafer, CdS wafer, CdSe wafer, CdTe wafer, ZnS wafer, ZnSe wafer and ZnTe wafer We provides high purity single crystal ZnO wafer and ZnO bulk for power device , LED , sensor and ...
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5 X 10 mm2 M Face Free-Standing GaN Substrates 350 ±25 µm TTV ≤ 10 µm 5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power ...
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50.8 ± 1 mm 2-inch Free-standing U-GaN/SI-GaN Substrates (1-100) ± 0.5o, 16 ± 1 mm 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm ...
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Thk 430μm 50mm Sapphire Substrate Wafer Wafer Edge R-Type Mirror Polished,EPI-Ready JDCD08-001-001 Diameter 50mm Sapphire substrate wafer , Thk 430μm, crystal orientation C/M0.2, ...
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2-inch Free-standing U-GaN/SI-GaN Substrates 350 ± 25 μm 50.8 ± 1 mm 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device...
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5*10.5mm2 SP-face (20-21)/(20-2-1) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Overview Gallium Nitride (GaN) substrate is a ...
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10*10.5mm2 C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Gallium Nitride (GaN) substrate is a high...
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5*10mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview These GaN wafers realize unprecedented ultra...
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5*10mm2 SP-face (20-21)/(20-2-1) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Gallium Nitride (GaN) substrate ...
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2-Inch Free-Standing N-GaN Substrates N Face Surface Roughness 0.5 ~1.5 μm (Single Side Polished) 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivit...
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10*10.5mm² C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser Overview Gallium Nitride (GaN) substrate is a high-quality ...
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2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview High-quality GaN free-standing substrates with low ...
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5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Power density is greatly improved in gallium ...
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5*10.5mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Power density is greatly improved in gallium ...
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