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Round <100> LaAlO3 Wafer Optical Substrate High Pressure Experimental Phase
LaAlO3 is a high temperature superconducting single crystal substrate. It is a good substrate material for epitaxial growth of high temperature superconducting thin films and giant magnetic thin films. Its dielectric properties are suitable for low loss microwave and dielectric resonance applications.
LaAlO3 single crystal provides a good lattice match to many materials with perovskite structure. It is an excellent substrate for epitaxial growth of high Tc superconductors, magnetic and ferro-electric thin films. The dielectric properties of LaAlO3 crystal are well suitable for low loss microwave and dielectric resonance applications.
Applications:
Electronic devices, catalysis, high temperature fuel cell, ceramics, sewage treatment, substrate materials
Main Advantages:
Small dielectric constant; low dielectric loss;good lattice matching;small thermal expansion coefficient;good chemical stability;wide energy gap;large specific surface area;certain activity; good thermal stability
Main Properties:
| Typical Physical Properties | |
| Crystal Structure | Cubic a=3.79 Angstroms |
| Growth Method | Czochralski |
| Density | 6.52 g/cm3 |
| Melt Point | 2080 oC |
| Thermal expansion | 10 (x10-6/ oC) |
| Dielectric Constant | ~ 25 |
| Loss Tangent at 10 GHz | ~3x10-4 @ 300K , ~0.6 x10-4 @77K |
| Color and Appearance | Transparent to Brown based on annealing condition. Visible twins on polished substrate |
| Chemical Stability | Insoluble in mineral acids at 25 oC and soluble in H3PO3 at> 150 oC |
