Results forand gate electronic ic chipsfrom 806 Products.
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STP20NM60-STP20NM60FP-STW20NM60 STB20NM60 - STB20NM60-1 N-CHANNEL 600V - 0.25Ω - 20A TO-220/FP/D²/I²PAK/TO-247 MDmesh™ MOSFET General Features TYPE VDSS RDS(on) ID STP20NM60 ...
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IRFBC30 N - CHANNEL 600V - 1.8 Ω - 3.6A - TO-220 PowerMESHTM ΙΙ MOSFET TYPE VDSS RDS(on) ID IRFBC30 600 V < 2.2 Ω 3.6 A TO-220 ■ TYPICAL RDS(on) = 1.8 Ω ■ EXTREMELY HIGH dv/dt ...
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Applications • High Efficiency Synchronous Rectification in SMPS • Uninterruptible Power Supply • High Speed Power Switching • Hard Switched and High Frequency Circuits Benefits • ...
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STF13NK50Z, STP13NK50Z, STW13NK50Z N-channel 500 V, 0.40 Ω, 11 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESHTM Power MOSFET Features Type VDSS RDS(on) max ID Pw STF13NK50Z ...
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CoolMOSTM Power Transistor Features PG-TO247 • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low ...
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STP10NK80Z - STP10NK80ZFP STW10NK80Z N-CHANNEL 800V - 0.78Ω - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP10NK80Z STP10NK80ZFP ...
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Applications ♦DC Motor Drive ♦High Efficiency Synchronous Rectification in SMPS ♦Uninterruptible Power Supply ♦High Speed Power Switching ♦Hard Switched and High Frequency Circuits ...
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TMOS E–FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM This advanced TMOS E–FET is designed to ...
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IRLML6401PBF HEXFET® Power MOSFET • Ultra Low On-Resistance • P-Channel MOSFET • SOT-23 Footprint • Low Profile (<1.1mm) • Available in Tape and Reel • Fast Switching • 1.8V Gate ...
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TN12, TS12 and TYNx12 Series SENSITIVE & STANDARD 12A SCRS Main Features Symbol Value Unit IT(RMS) 12 A VDRM/VRRM 600 to 1000 V IGT 0.2 to 15 mA DESCRIPTION Available either in ...
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AO4620 Complementary Enhancement Mode Field Effect Transistor General Description The AO4620 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate ...
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4 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE NPN Epitaxial Silicon Transistor PACKAGE DIMENSIONS (in millimeter) DESCRIPTION The 2SK2414 is N-Channel MOS Field Effect ...
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HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die IXFK 27N80Q IXFR 27N80Q IXFX 27N80Q VDSS = 800 V ID25 = 27 A RDS(on) = 300 m trr ≤ 250 ns N-Channel Enhancement Mode Avalanche ...
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SiHG20N50C Power MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit Ron x Qg • 100 % Avalanche Tested • High Peak Current Capability • dV...
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SUM110P06-07L P-Channel 60-V (D-S) 175℃ MOSFET FEATURES • TrenchFET Power MOSFET • New Package with Low Thermal Resistance APPLICATIONS • Automotive − 12-V Boardnet − High-Side ...
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STD65NF06 STP65NF06 N-channel 60V - 11.5mΩ - 60A - DPAK/TO-220 STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STD65NF06 60V <14mΩ 60A STP65NF06 60V <14mΩ 60A ■ ...
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SUM110P06-07L P-Channel 60-V (D-S) 175℃ MOSFET FEATURES • TrenchFET Power MOSFET • New Package with Low Thermal Resistance APPLICATIONS • Automotive − 12-V Boardnet − High-Side ...
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STP3NK90Z - STP3NK90ZFP STD3NK90Z - STD3NK90Z-1 N-CHANNEL 900V - 4.1Ω - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET • TYPICAL RDS(on) = 4.1 Ω • EXTREMELY ...
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MOSFETs Silicon N-Channel MOS (DTMOS) TK10P60W Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super ...
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FDS5690 60V N-Channel PowerTrench MOSFET smd power mosfet linear power mosfet Features • 7 A, 60 V. RDS(on) = 0.028 Ω @ VGS = 10 V RDS(on) = 0.033 Ω @ VGS = 6 V. • Low gate charge ...
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![IRFBC30 dual power mosfet Power Mosfet Transistor N-CHANNEL 600V 1.8 ohm TO-220 PowerMESH]II MOSFET](http://img2.everychina.com/img/f2/9d/b4922e2036207289a4eaa0c5b6de-80x80c1-8560/irfbc30_dual_power_mosfet_power_mosfet_transistor_n_channel_600v_1_8_ohm_to_220_powermesh_ii_mosfet.jpg)
