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STP65NF06 Power Mosfet Transistor N-channel DPAK/TO-220 Power MOSFET

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ChongMing Group (HK) Int'l Co., Ltd

STP65NF06 Power Mosfet Transistor N-channel DPAK/TO-220 Power MOSFET

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Product Details

 

STD65NF06

STP65NF06

N-channel 60V - 11.5mΩ - 60A - DPAK/TO-220 STripFET™ II Power MOSFET

 

General features

TypeVDSSRDS(on)ID
STD65NF0660V<14mΩ60A
STP65NF0660V<14mΩ60A

 

■ Standard level gate drive

■ 100% avalanche tested

 

Description

This Power MOSFET is the latest development of STMicroelectronics unique “single feature size”™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

 

Applications

■ Switching application

 

  

 

Absolute maximum ratings

SymbolParameterValueUnit
VDSDrain-source voltage (VGS = 0)60V
VGSGate- source voltage± 20V
IDDrain current (continuous) at TC = 25°C60A
IDDrain current (continuous) at TC = 100°C42A
IDM(1)Drain current (pulsed)240A
PtotTotal dissipation at TC = 25°C110W
 Derating Factor0.73W/°C
dv/dt (2)Peak diode recovery voltage slope10V/ns
EAS (3)Single pulse avalanche energy390mJ
TstgStorage temperature-55 to 175°C
TjMax. operating junction temperature

1. Pulse width limited by safe operating area.

2. ISD ≤60A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

3. Starting Tj = 25 °C, ID = 30A, VDD = 40V

 

 

 

 

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