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AO4620 Power Mosfet Transistor Complementary Enhancement Mode Field Effect Transistor

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ChongMing Group (HK) Int'l Co., Ltd

AO4620 Power Mosfet Transistor Complementary Enhancement Mode Field Effect Transistor

Country/Region china
City & Province shenzhen
Categories Solar Chargers
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Product Details

 

AO4620 Complementary Enhancement Mode Field Effect Transistor

 

General Description

The AO4620 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. Standard Product AO4620 is Pb-free (meets ROHS & Sony 259 specifications).

 

Features

   n-channel                             p-channel

VDS (V) = 30V                            -30V

ID = 7.2A (VGS=10V)                  -5.3A (VGS = -10V)

RDS(ON)                                    RDS(ON)

< 24mΩ (VGS=10V)                  < 38mΩ (VGS = -10V)

< 36mΩ (VGS=4.5V)                 < 60mΩ (VGS = -4.5V)

 

 

 

Absolute Maximum Ratings TA=25°C unless otherwise noted

ParameterSymbolMax n-channelMax p-channelUnits
Drain-Source VoltageVDS30-30V
Gate-Source VoltageVGS±20±20V
Continuous Drain Current FTA=25°CID7.2-5.3A
TA=70°C6.2-4.5A
Pulsed Drain Current BIDM30-30A
Power Dissipation FTA=25°CPD22W
TA=70°C1.441.44W
Avalanche Current BIAR1317A
Repetitive avalanche energy 0.3mH BEAR2543mJ
Junction and Storage Temperature RangeTJ, TSTG-55 to 150-55 to 150°C

B: Repetitive rating, pulse width limited by junction temperature.

F.The power dissipation and current rating are based on the t ≤ 10s thermal resistance rating.

 

 

 

 

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