Results fortemplate gan substratesfrom 232 Products.
|
|
2inch C-face Fe-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices The achieved breakdown voltage of the Fe-doped GaN epitaxial layer can be ...
|
|
|
|
|
2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview GaN has excellent material characteristics for use ...
|
|
|
|
|
With wide direct bandgap(3.4 eV), strong atomic bonds, high thermal conductivity and excellent radiation resistance, GaN is not only short-wave-length optoelectronic material, but ...
|
|
|
|
GaN on Sapphire wafer manufacturer 2 Inch GaN SubstrateAs the leading manufacturer of GaN substrate, Homray Material Technology provide GaN On Sapphire wafer. The size are 2inch and 4 inch. GaN layer thickness is 4.5um±0...
|
|
|
|
2 inch Free-Standing GaN Substrates Dimensions:Ф 50.8 mm ± 1 mm Thickness:350 ± 25 µm Useable Surface Area:> 90% Orientation:C-plane (0001) off angle toward M-Axis 0.35°± 0.15° Orientation Flat:(1-100) ± 0.5°, 16.0 ± 1.0 ...
|
|
|
|
|
8inch dia200mm 4H-N Production grade dummy grade SiC wafers Production grade DUMMY grade SiC substrates, Silicon Carbide substrates for a semiconductor device, Application areas 1 ...
|
|
|
|
|
2 Inch Free Standing U-GaN Bulk GaN Substrates,Epi-Ready Grade For GaN Laser Diode PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN ...
|
|
|
|
|
(20-2-1) Plane N-GaN Freestanding GaN Substrate With Low Dislocation Density PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate ...
|
|
|
|
|
10*10mm2 N-GaN Freestanding GaN Substrate, Epi-Ready With Double Side Polished PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN ...
|
|
|
|
|
A Plane N-GaN Freestanding GaN Substrate PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer which is for UHB-LED and LD. ...
|
|
|
|
|
10*10mm2 Si-GaN Freestanding GaN Substrate For Iii-Nitride LDs PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer which ...
|
|
|
|
|
(20-21) Plane U-GaN Freestanding Gallium Nitride (GaN) Substrate PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer which ...
|
|
|
|
|
(11-22) Plane Si-GaN Freestanding GaN Substrate By Hydride Vapor Phase Epitaxy PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN ...
|
|
|
|
|
(10-11) Crystal Plane Si-GaN Freestanding GaN Substrate -Powerway Wafer PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate ...
|
|
|
|
|
A Plane U-GaN Freestanding Hvpe-GaN Substrate For Iii-Nitride Devices PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer ...
|
|
|
|
|
(10-11) Plane N-GaN Freestanding GaN Substrate For Nonodevices PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer which ...
|
|
|
|
|
Low Resistivity (11-22) Plane N-GaN Freestanding GaN Substrate By HVPE PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer ...
|
|
|
|
|
Nonpolar M Plane Si-GaN Freestanding GaN Substrate For Schottky Barrier Diodes(SBDs) PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN ...
|
|
|
|
|
2 Inch Freestanding N-GaN Bulk GaN Substrates For LED,LD Or HEMT Structure PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate ...
|
|
|
|
|
Freestanding GaN Substrate, N Type, Semi-Insulating For Rf,Power,Led And Ld Freestanding GaN substrate PAM-XIAMEN has established the manufacturing technology for freestanding ...
|
|
|
