Results forsilicon power transistor low leakagefrom 141862 Products.
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MJE15030G 8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120−150 VOLTS, 50 WATTS Features • DC Current Gain Specified to 4.0 Amperes hFE = 40 (Min) @ IC = 3.0 Adc = 20 (Min) @ IC ...
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Silicon PNP Power Transistors BD136 BD138 BD140 DESCRIPTION · ·With TO-126 package ·High current ·Complement to type BD135/137/139 APPLICATIONS ·Driver stages in high-fidelity ...
china
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MRF173 N-Channel Enhancement Mode MOSFETs RF Power Transistor Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain ...
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TO-220-3L Plastic - Encapsulated Transistors TIP117 DARLINGTON TRANSISTOR (NPN) FEATURE High DC Current Gain Low Collector-Emitter Saturation Voltage Complementary to TIP112 ...
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China company supplied silicone pads, Soft and compressible for low stress applications,like CPU The TIF160-01ES thermal silicone pad is a product with both performance and economy...
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Product Description: TSS diodes are packaged in a DO-214AA/SMB package size, making them easy to install and integrate into existing electrical systems. These small form factor ...
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Wide Band Low Noise Amplifier high power and low noise 0.1-6 GHz 38dBm RF Power Amplifier for scientific research Description Frequency Range: Covers a wide frequency range from 0...
china
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MJD340TF High Voltage Power Transistors D-PAK switching power mosfet High Voltage Power Transistors D-PAK for Surface Mount Applications • Lead Formed for Surface Mount Application...
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MRF173 N-Channel Enhancement Mode MOSFETs RF Power Transistor Designed for broadband commercial and military applications up to 200 MHz frequency range. The high–power, high–gain ...
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TO-220-3L Plastic - Encapsulated Transistors TIP117 DARLINGTON TRANSISTOR (NPN) FEATURE High DC Current Gain Low Collector-Emitter Saturation Voltage Complementary to TIP112 ...
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Silicon Controlled Rectifiers Features ■ Sensitive gate trigger current: IGT=200uA maximum ■ Low on-state voltage: VTM=1.2(typ.)@ ITM ■ Low reverse and forward blocking current: ...
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TC74VHC11FT TRIPLE 3-INPUT AND GATE low cost audio amplifier Triple 3-Input AND Gate The TC74VHC11 is an advanced high speed CMOS 3-INPUT AND GATE fabricated with silicon gate ...
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Silicon NPN Darlington Power Transistors 2SD2390 DESCRIPTION ·With TO-3PN package ·Complement to type 2SB1560 ·High DC current gain APPLICATIONS ·Audio ,regulator and general ...
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BD681 NPN Darlington Power Transistors Medium Power Switching ■ SGS-THOMSON PREFERRED SALESTYPES ■ COMPLEMENTARY PNP - NPN DEVICES ■ MONOLITHIC DARLINGTON CONFIGURATION ■ ...
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RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet DESCRIPTION RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers ...
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MJD122G Complementary Darlington Power Transistor switching power mosfet low power mosfet Designed for general purpose amplifier and low speed switching applications. Features • ...
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IRF7424TRPBF HEXFETPower MOSFET testing power transistors Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free Description These P-Channel ...
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Complementary power transistors Features ■ Low collector-emitter saturation voltage ■ Complementary NPN - PNP transistors Applications ■ General purpose ■ Audio Amplifier ...
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Silicon PNP Power Transistors BD910 BD912 DESCRIPTION · ·With TO-220C package ·Complement to type BD909 BD911 APPLICATIONS ·Intented for use in power linear and switching ...
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BD442 PNP power transistor high power mosfet transistors Features ■ PNP transistor Applications ■ Linear and switching industrial equipment Description This devices is manufactured ...
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