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TIP117 High Current Transistor , Power Switch Transistor Low Leakage

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

TIP117 High Current Transistor , Power Switch Transistor Low Leakage

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City & Province shenzhen guangdong
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Product Details

TO-220-3L Plastic - Encapsulated Transistors TIP117 DARLINGTON TRANSISTOR (NPN)

 

 

FEATURE
  •  High DC Current Gain
  •  Low Collector-Emitter Saturation Voltage
  • Complementary to TIP112
 

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

 

SymbolParameterValueUnit
VCBOCollector-Base Voltage-100V
VCEOCollector-Emitter Voltage-100V
VEBOEmitter-Base Voltage-5V
ICCollector Current-2A
PCCollector Power Dissipation2W
RθJAThermal Resistance From Junction To Ambient63℃/W
TjJunction Temperature150
TstgStorage Temperature-55~+150

 

 

 

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

 

ParameterSymbolTest conditionsMinTypMaxUnit
Collector-base breakdown voltageV(BR)CBOIC=-1mA,IE=0-100  V
Collector-emitter breakdown voltageV(BR)CEO*IC=-30mA,IB=0-100  V
Emitter-base breakdown voltageV(BR)EBOIE=-5mA,IC=0-5  V
Collector cut-off currentICBOVCB=-100V,IE=0  -1mA
Collector cut-off currentICEOVCE=-50V,IB=0  -2mA
Emitter cut-off currentIEBOVEB=-5V,IC=0  -2mA

 

DC current gain

hFE(1)VCE=-4V, IC=-1A1000 12000 
 hFE(2)VCE=-4V, IC=-2A500   
Collector-emitter saturation voltageVCE(sat)IC=-2A,IB=-8mA  -2.5V
Base-emitter voltageVBEVCE=-4V, IC=-2A  -2.8V
Collector output capacitanceCobVCB=-10V,IE=0, f=0.1MHz  200pF

 

 

TO-220-3L Package Outline Dimensions

 

SymbolDimensions In MillimetersDimensions In Inches
 MinMaxMinMax
A4.4704.6700.1760.184
A12.5202.8200.0990.111
b0.7100.9100.0280.036
b11.1701.3700.0460.054
c0.3100.5300.0120.021
c11.1701.3700.0460.054
D10.01010.3100.3940.406
E8.5008.9000.3350.350
E112.06012.4600.4750.491
e2.540 TYP0.100 TYP
e14.9805.1800.1960.204
F2.5902.8900.1020.114
h0.0000.3000.0000.012
L13.40013.8000.5280.543
L13.5603.9600.1400.156
Φ3.7353.9350.1470.155

 

 

TO-220-3L Plastic-Encapsulate Transistors TIP42/42A/42B/42C TRANSISTOR (PNP)

 

 


 

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