Active Member
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[China]
Address: Room 36B1-B2, Building C, Electronics Science & Technology Building Shennan Mid-Road, Shenzhen China
Contact name:Sharon Yang
Anterwell Technology Ltd. |
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Silicon NPN Darlington Power Transistors 2SD2390
DESCRIPTION 
·With TO-3PN package
·Complement to type 2SB1560
·High DC current gain
APPLICATIONS
·Audio ,regulator and general purpose
PINNING
| PIN | DESCRIPTION |
| 1 | Base |
| 2 | Collector;connected to mounting base |
| 3 | Emitter |
CHARACTERISTICS Tj=25℃ unless otherwise specified
| SYMBOL | PARAMETER | CONDITIONS | MIN | TYP. | MAX | UNIT |
| V(BR)CEO | Collector-emitter breakdown voltage | IC=30mA ;IB=0 | 150 | V | ||
| VCEsat | Collector-emitter saturation voltage | IC=7A ;IB=7mA | 2.5 | V | ||
| VBEsat | Base-emitter saturation voltage | IC=7A ;IB=7mA | 3.0 | V | ||
| ICBO | Collector cut-off current | VCB=160V IE=0 | 100 | μA | ||
| IEBO | Emitter cut-off current | VEB=5V; IC=0 | 100 | μA | ||
| hFE | DC current gain | IC=7A ; VCE=4V | 5000 | |||
| Cob | Output capacitance | IE=0 ; VCB=10V;f=1MHz | 95 | pF | ||
| fT | Transition frequency | IC=2A ; VCE=12V | 55 | MHz | ||
| Switching times | ||||||
| ton | Turn-on time | IC=7A;RL=10Ω IB1=- IB2=7mA VCC=70V | 0.5 | μs | ||
| ts | Storage time | 10.0 | μs | |||
| tf | Fall time | 1.1 | μs | |||
hFE Classifications
| O | P | Y |
| 5000-12000 | 6500-20000 | 15000-30000 |
PACKAGE OUTLINE
