|
[China]
Trade Verify
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Contact name:DANDAN
Shenzhen Sai Collie Technology Co., Ltd. |
|
Verified Suppliers
|
|
|
SVD2955T4G MOSFET Power Electronics P-Channel DPAK -60 V -12 A Avalanche Energy Specified
N-Channel PowerTrench® MOSFETFDMS7678 MOSFET Power Electronics30 V, 22 A, 10 mΩ
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
Rds On (Max) @ Id, Vgs | 180mOhm @ 6A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 25 V | |
FET Feature | - | |
Power Dissipation (Max) | 55W (Tj) | |
Operating Temperature | -55°C ~ 175°C (TJ) | |
Mounting Type | ||
Supplier Device Package | DPAK | |
Package / Case |
This Power MOSFET is designed to withstand high energy in the
avalanche and commutation modes. Designed for low−voltage, high−
speed switching applications in power supplies, converters, and
power motor controls. These devices are particularly well suited
for bridge circuits where diode speed and commutating safe
operating areas are critical and offer an additional safety margin
against unexpected
voltage transients.
Features
• Avalanche Energy Specified
• IDSS and VDS(on) Specified at Elevated Temperature
• Designed for Low−Voltage, High−Speed Switching Applications and
to Withstand High Energy in the Avalanche and Commutation Modes
• NVD and SVD Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
res
