Active Member
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[China]
Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen
Contact name:DANDAN
Shenzhen Sai Collie Technology Co., Ltd. |
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FDMS7698 MOSFET Power Electronics N-Channel
PowerTrench® 30 V 22 A 10 mΩ Package 8-PQFNN-Channel PowerTrench® MOSFET
30 V, 22 A, 10 mΩ
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 10mOhm @ 13.5A, 10V | |
Vgs(th) (Max) @ Id | 3V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 1605 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.5W (Ta), 29W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | 8-PQFN (5x6) | |
Package / Case |
Features:
Max r DS(on) = 10 mΩ at VGS = 10 V, ID = 13.5 A
Max r DS(on) = 15 mΩ at VGS = 4.5 V, ID = 11.0 A
Advanced Package and Silicon combination for low r DS(on)
and high efficiency
Next generation enhanced body diode technology,
engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
General Description:
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM cont rollers. It has been optimized
for low gate charge, low r DS(on), fast switching speed and body
diode reverse recovery performance.
Applications:
IMVP Vcore Switching for Notebook
VRM Vcore Switching for Desktop and server
OringFET / Load Switching
DC-DC Conversion
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