Shenzhen Sai Collie Technology Co., Ltd. |
|
FDMS7678 MOSFET Power Electronics N-Channel Trench® 30 V 26 A 5.5 mΩ Package 8-PQFN
N-Channel PowerTrench® MOSFETFDMS7678 MOSFET Power Electronics30 V, 22 A, 10 mΩ
Drain to Source Voltage (Vdss) | ||
Current - Continuous Drain (Id) @ 25°C | ||
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | |
Rds On (Max) @ Id, Vgs | 5.5mOhm @ 17.5A, 10V | |
Vgs(th) (Max) @ Id | 3V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V | |
Vgs (Max) | ±20V | |
Input Capacitance (Ciss) (Max) @ Vds | 2410 pF @ 15 V | |
FET Feature | - | |
Power Dissipation (Max) | 2.3W (Ta), 41W (Tc) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | ||
Supplier Device Package | 8-PQFN (5x6) | |
Package / Case |
Features:
Max rDS(on) = 5.5 mΩ at VGS = 10 V, ID = 17.5 A
Max rDS(on) = 6.8 mΩ at VGS = 4.5 V, ID = 15 A
High Performance Technology for Extremely Low rDS(on)
Termination is Lead-Free
RoHS Compliant
General Description:
This N-Channel MOSFET is produced using Fairchild Semiconductor’s
advanced Power Trench® process that has been especially tailored to
minimize the on-state resistance. This device is well suited for
Power Management and load switching applications common in Notebook
Computers and Portable Battery Packs.
Applications:
DC - DC Buck Converters
Notebook Battery Power Management
Load Switch in Notebook
res