Results forpower voltage protector socketfrom 218629 Products.
|
|
Here is the English description of the NCP3133AMNTXG chip: Breakdown Voltage: 30V Continuous Drain Current: 3.3A On-Resistance: 55 mΩ (typ) Fast Switching Speeds Power SO-8 Package ...
china
|
|
|
|
|
Product Description: 5.8G Drone Signal Jammer Module, 10W (40 dBm). frequency 430-450/860-873/ 902-928/1100-1300 1560-1620/2400-2500/customize Work Temperature -20~+70 Max Output ...
china
|
|
|
|
|
TK-FXX102 HONEYWELL 10 Slot Rack Chassis I/O Module Product Information The Honeywell TK-FXX102 is a 10-slot rack power supply that provides 5.1VDC, 24VDC, and 3.3VDC output ...
|
|
|
|
|
Here is the English description of the NCP308MTADJTBG chip: Breakdown Voltage: 30V Continuous Drain Current: 3.08A On-Resistance: 48 mΩ (typ) Fast Switching Speeds Power SO-8 ...
china
|
|
|
|
|
Here is the English description of the NCV5662DSADJR4G chip: Breakdown Voltage: 30V On-Resistance: N/A (typ) Continuous Drain Current: 0.662A Fast Switching Speeds Power SO-8 ...
china
|
|
|
|
|
Here is the English description of the NSVC2030JBT3G chip: Breakdown Voltage: 30V Continuous Drain Current: 20A On-Resistance: N/A (typ) Fast Switching Speeds Power Mini-Flat No...
china
|
|
|
|
|
Here is the English description of the NCP13992ABDR2G chip: Breakdown Voltage: 30V Continuous Drain Current: 13A On-Resistance: N/A (typ) Fast Switching Speeds TO-263AB Power Pack ...
china
|
|
|
|
|
Here is the English description of the NCP730ASN330T1G chip: Breakdown Voltage: 30V Continuous Drain Current: 7.3A On-Resistance: 30 mΩ (typ) Fast Switching Speeds Power SO-8 ...
china
|
|
|
|
|
Here is the English description of the FAN1100-F085 chip: Type: Dual N-Channel Power Stage Continuous Current per Channel: 10A On Resistance: 85 mΩ (max) Gate Charge: 160nC (typ) ...
china
|
|
|
|
|
Here is the English description of the NCP718ASN500T1G chip: Breakdown Voltage: 30V Continuous Drain Current: 7.18A On-Resistance: 50 mΩ (typ) Fast Switching Speeds Power SO-8 ...
china
|
|
|
|
|
Here is the English description of the NCV8605MNADJT2G chip: Function: Dual N-Channel Power MOSFET Drain-Source Breakdown Voltage: 30V Continuous Drain Current per Channel: 6A On...
china
|
|
|
|
|
Here is the English description of the NCP161AFCT180T2G chip: Function: Dual N-Channel Power MOSFET Drain-Source Breakdown Voltage: 180V Continuous Drain Current per Channel: 15A ...
china
|
|
|
|
|
Here is the English description of the NCV59744MNADJTBG chip: Function: Dual N-Channel Power MOSFET Drain-Source Breakdown Voltage: 50V Continuous Drain Current per Channel: 7.5A ...
china
|
|
|
|
|
Here is the English description of the NCV361SNT1G chip: Function: N-Channel Power MOSFET Drain-Source Breakdown Voltage: 30V Continuous Drain Current: 18A On-Resistance: 1mΩ (max) ...
china
|
|
|
|
|
Here is the English description of the NCP380HMU10AATBG chip: Function: 10A Dual Channel N-Channel Power MOSFET Drain-Source Breakdown Voltage: 30V Continuous Drain Current per ...
china
|
|
|
|
|
Here is the English description of the NCV4276CDSADJR4G chip: Function: Dual N-Channel Power MOSFET with Current Balance Drain-Source Breakdown Voltage: 50V Continuous Drain ...
china
|
|
|
|
|
Here is the English description of the NCV8403ASTT3G chip: Function: Dual N-Channel Power MOSFET with Current Balance Drain-Source Breakdown Voltage: 30V Continuous Drain Current ...
china
|
|
|
|
|
Here is the English description of the NCV70517MW002R2G chip: Function: Dual N-Channel Power MOSFET Drain-Source Breakdown Voltage: 20V Continuous Drain Current per Channel: 2A On...
china
|
|
|
|
|
Here is the English description of the NCP81245MNTXG chip: Function: Dual P-Channel Power MOSFET Drain-Source Breakdown Voltage: 25V Continuous Drain Current per Channel: 5A On...
china
|
|
|
|
|
Here is the English description of the NFAQ1560R43TL chip: Drain-Source Max Continuous Forward Current: 15A Drain-Source Breakdown Voltage: 60V Package: SOT-227 (SSS-8) Gate-Source ...
china
|
|
|
