FAN1100-F085 onsemi / Fairchild

Here is the English description of the FAN1100-F085 chip:

• Type: Dual N-Channel Power Stage
• Continuous Current per Channel: 10A
• On Resistance: 85 mΩ (max)
• Gate Charge: 160nC (typ)
• Dropout Voltage: 1.5V (max)
• Package: PowerPAK SOIC-8

The FAN1100-F085 is a dual N-channel power MOSFET module from Infineon.

Key Features:

• Integrated dual power stage enables high current half-bridge topology
• Operating current of 10A per channel for up to 20A total
• Low on resistance of 85 mΩ for minimal conduction losses
• 160nC gate charge allows for fast switching
• PowerPAK SOIC-8 package provides strong thermal capability

Common Applications:

• Motor drivers and controls above 10A load current
• Half-bridge topologies requiring up to 20A bidirectional current
• Industrial power supplies where high power density is needed

Benefits include a fully integrated power stage in a compact package. This allows for up to 20A switching with best-in-class thermal performance.

Well-suited for applications requiring bi-directional current capability between 10A-20A where minimizing size is important.

In summary, the FAN1100-F085 is a dual 10A power module optimized for high current, space constrained switching designs.