NCP308MTADJTBG onsemi

Here is the English description of the NCP308MTADJTBG chip:

• Breakdown Voltage: 30V
• Continuous Drain Current: 3.08A
• On-Resistance: 48 mΩ (typ)
• Fast Switching Speeds
• Power SO-8 Package
• Integrated JTAG Interface

The NCP308MTADJTBG is an N-channel power MOSFET from ON Semiconductor.

Key Features:

• Designed for switching currents up to 3.08A
• Low on-resistance of 48 mΩ minimizes conduction losses
• Fast switching for high efficiency applications
• Power SO-8 package provides good thermal dissipation
• Integrated JTAG interface for programming and debugging

Common Applications:

• DC-DC converters below 3.08A load current
• Motor drivers requiring in-circuit programming
• Systems needing advanced testing functionality

Benefits include a compact 3.08A switch with integrated JTAG to enable in-circuit testing and programming.

Well-suited for applications where direct PCB programming and debugging is needed.

In summary, the NCP308MTADJTBG power MOSFET combines 3.08A switching with an integrated JTAG interface in a small footprint package.