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optoelectronics single crystal quartz wafer

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sapphire glass blade for razor,Al2O3 single crystal glass wafer,artificial sapphire injector ,sapphre lenssapphire optical lens, Al2O3 single crystal glass ,sapphire optical glass ...
Shanghai, china
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Lead-Free Congruent LiNbO3 (LNC) Single Crystals With Large ME Effects Recently, we have shown the possibility to produce large ME effects in composites containing lead-free ...
Shanghai, china
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5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Power density is greatly improved in gallium ...
Shanghai, china
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2inch GaAs Substrates Single Crystal Gallium Arsenide Substrates Semi-Conducting N Type --------------------------------------------------------------------------------------------...
Shanghai, china
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4mm x 4mm x 50mm LGS Single Crystal With Au Coating Bar​ Langasite crystal (La3Ga5SiO14,LGS), belonging to the space group P321, point group 32, has been reported to be promising ...
china
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2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/4inch 6inch silicon carbide SIC 4H-N seed crystal Wafer For crystal growth About Silicon Carbide (SiC)Crystal Silicon carbide ...
Shanghai, china
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5*10.5mm2 SP-face (10-11) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Generative adversarial networks (GANs) are ...
Shanghai, china
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2” 3’’ FZ SiO2 Single Crystal IC Chips 100um 200um Dry Wet Oxidation Layer 100nm 300nm Product description: The silicon wafer is formed through a furnace tube in the presence of an ...
Shanghai, china
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Transparent Quartz Wafers Thickness 0.5mm High Transmittance UV Quartz Glass Sheet 0.2mm--- 1.0mm thickness LED Back Light quartz/borofloat Glass Wafer Polished Quartz Plate/Disc ...
Shanghai, china
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5*10mm2 SP-face (10-11) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview GaN has many serious advantages over ...
Shanghai, china
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Lithium Niobium Trioxide Lithium Tantalate Crystals Lithium Niobate LT LN Crystals For 5G Application Lithium niobate crystal is one of the most widely used new inorganic materials...
Shanghai, china
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5*10mm2 SP-face (10-11) Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices wafer Now a new material called Gallium Nitride (GaN) has the ...
Shanghai, china
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5*10mm2 SP-face (11-12) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Because GaN transistors are able to ...
Shanghai, china
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5*10mm2 SP-face (20-21)/(20-2-1) Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview A generative adversarial ...
Shanghai, china
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5*10.5mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm Power device/laser wafer Overview Power density is greatly improved in gallium ...
Shanghai, china
Verified
5*10mm2 M-face Un-doped n-type Free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Various physical aspects and potential applicatio...
Shanghai, china
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JDCD02-001-001 1inch AlN single crystal 400±50μm S/P/R grade AlN substrate is one of the most popular ceramic substrate which has excellent heat resistance, high mechnical strength ...
Shanghai, china
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JDCD02-001-001 1inch AlN single crystal 400±50μm S/P/R grade AlN substrate is one of the most popular ceramic substrate which has excellent heat resistance, high mechnical strength ...
Shanghai, china
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5*10mm2 A-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview Gallium nitride (GaN) is a very hard, mechanicall...
Shanghai, china
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25.4±0.5mm 1inch AlN Single Crystal 400±50μM S/P/R Grade {0001}±0.5° JDCD02-001-002 1inch AlN single crystal 400±50μm S/P/R grade Aluminum Nitride is a highly desirable material in ...
Shanghai, china
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