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AO4620 Complementary Enhancement Mode Field Effect Transistor General Description The AO4620 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate ...
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Product Technical Specifications N Channel Transistor Discrete Semiconductors SIHF10N40D-E3 Power Mosfets EU RoHS Compliant ECCN (US) EAR99 Part Status Active HTS 8541.29.00.95 ...
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HMI PLC All In One High Processing Speed 32bit CPU 408MHz RS485 COM Ports Each PLC has its own programming port (RS232). Two communication ports (RS232 or RS485) are optional, and ...
china
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BF422 NPN SILICON PLANAR EPITAXIAL TRANSISTOR low power mosfet N Channel MOS FET ABSOLUTE MAXIMUM RATINGS(Ta=25 deg C ) DESCRIPTION SYMBOL VALUE UNITS Collector -Base Voltage VCBO ...
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2SK3377 MOS Field Effect Transistor 3 terminal voltage regulator DESCRIPTION The 2SK3377 is N-Channel MOS Field Effect Transistor designed for high current switching applications. ...
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AP4506GEH N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Good Thermal Performance ▼ Fast Switching Performance Description Advanced Power MOSFETs from ...
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HEXFET Power Mosfet Transistor , power mosfet module IRF7329 Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (<1.8mm) Available in Tape & Reel Lead-Free ...
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3568 Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.4Ω (typ.) • High ...
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N-CHANNEL 60V - 0.07Ω - 4A SOT-223 STripFET™ II POWER MOSFET ■ TYPICAL RDS(on) = 0.07 Ω ■ EXCEPTIONAL dv/dt CAPABILITY ■ AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED ■ LOW ...
Guangdong, china
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STP4NK60Z - STP4NK60ZFP STB4NK60Z-STD4NK60Z-STD4NK60Z-1 N-CHANNEL 600V - 1.76Ω - 4A TO-220/FP/DPAK/IPAK/D2PAK Zener-Protected SuperMESHTMPower MOSFET ■ TYPICAL RDS(on) = 1.76 Ω ■ ...
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STB20NM50 - STB20NM50-1 STP20NM50 - STP20NM50FP N-CHANNEL 550V@Tjmax - 0.20Ω - 20A - TO220/FP-D²PAK-I²PAK Zener-Protected SuperMESH™ MOSFET General features Type VDSS(@Tj max) RDS...
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STP20NM60-STP20NM60FP-STW20NM60 STB20NM60 - STB20NM60-1 N-CHANNEL 600V - 0.25Ω - 20A TO-220/FP/D²/I²PAK/TO-247 MDmesh™ MOSFET General Features TYPE VDSS RDS(on) ID STP20NM60 ...
Guangdong, china
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N-Channel Enhancement Mode MOSFET Features · 25V/50A , RDS(ON) =7.5mW(typ.) @ VGS =10V RDS(ON) =13mW(typ.) @ VGS =4.5V · Super High Dense Cell Design · Avalanche Rated · Reliable ...
Guangdong, china
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N - Channel 600 V 2.0 Ohm rf high Power Mosfet Transistor NDD04N60ZT4G Features • Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • These ...
Guangdong, china
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IRFP150N Transistor Electronics Components electronic devices N-Channel Power MOSFET Features • Ultra Low On-Resistance - rDS(ON) = 0.030Ω, VGS = 10V • Simulation Models - ...
Guangdong, china
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RJH60F7ADPK Silicon N Channel IGBT High Speed Power Switching Features Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15V, Ta = 25°C) Built ...
Guangdong, china
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2SK3478 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV) ►Low drain-source ON resistance: RDS (ON) = 10 Ω (typ.) ►High forward transfer admittance: |Yfs| = 0.4 ...
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AON7403 P-Channel Enhancement Mode Field Effect Transistor General Description The AON7403/L uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate ...
Guangdong, china
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TPC8020-H Field Effect Transistor Silicon N Channel MOS Type silicon circuit board · Small footprint due to small and thin package · High-speed switching · Small gate charge: Qg = ...
Guangdong, china
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TPC8111 Field Effect Transistor Silicon P Channel MOS Type HEXFET Power MOSFET Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications • Small ...
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