Results formicroelectronic silicon epitaxial waferfrom 1429 Products.
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JDCD03-001-001 2-inch SiC substrate P-level 4H-N/SI<0001>260μm±25μm for power devices and microwave devices Overview The unique electronic and thermal properties of silicon carbide ...
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Surface Mount Plastic SOT-23 Package Silicon Planar Zener Diodes This series of Zener diodes is offered in the convenient, surface mount plastic SOT-23 package. These devices are ...
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customzied size MPCVD method GaN&Diamond Heat Sink wafers for Thermal management area GaN is widely used in radio frequency, fast charging and other fields, but its performance and ...
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Etching Tray Semiconductor Consumables Main features The etching tray is made of high purity sintered silicon carbide ceramics without pressure.It has the characteristics of high ...
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C-axis (0001) orientation 8inch diameter 200mm with notch DSP Sapphire Substrate wafers thickness 1.15mm C-a Sapphire application Application Sapphire wafer and substrate ...
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GaAs Based Epi Wafer We provides MBE / MOCVD epitaxial growth of custom structure on GaAs substrate for microelectronics , optoelectronics and RF Microwave applications , in ...
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Thickness 400 ± 30 μm 2-Inch Free-Standing N-GaN Substrates Dimensions 50.0 ±0.3 mm 2inch C-face Si-doped n-type free-standing GaN single crystal substrate Resistivity < 0.05 Ω·cm ...
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customzied size MPCVD method GaN&Diamond Heat Sink wafers for Thermal management area MPCVD method polytype Diamond substrate wafers for GaN epitaxial Diamond has wide band gap, ...
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customzied size MPCVD method GaN&Diamond Heat Sink wafers for Thermal management area According to statistics, the temperature of the working junction will drop Low 10 ° C can ...
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InP Based Epi Wafer We provides MBE / MOCVD epitaxial growth of custom structure on InP substrate for microelectronics , optoelectronics and RF Microwave applications , in diameter ...
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50.8 ± 1 mm 2-inch Free-standing U-GaN/SI-GaN Substrates (1-100) ± 0.5o, 16 ± 1 mm 2inch C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm ...
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4inch 6inch GaN-ON-SiC EPI layer wafers GaN-ON-Si EPI layer wafers About GaN-on-GaN GaN-on-SIC Feature Introduce GaN epitaxial wafer: According to the different substrates, it is ...
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SiC Substrate/Wafers (150mm, 200mm) Silicon Carbide Ceramic Excellent CorrosionSingle crystal single side polished silicon wafer sic wafer polishing wafer manufacturer Silicon ...
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InP Based Epi Wafer We provides MBE / MOCVD epitaxial growth of custom structure on InP substrate for microelectronics , optoelectronics and RF Microwave applications , in diameter ...
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10*10.5mm² C-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser Overview We provide high-quality GaN substrates which are ...
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Indium Phosphide Wafer InP Semiconductor Substrates Epitaxial 2'' 3'' Thickness 350um Description of Indium Phosphide: Indium Phosphide (InP) chips are a widely used material in ...
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GaAs Based Epi Wafer We provides MBE / MOCVD epitaxial growth of custom structure on GaAs substrate for microelectronics , optoelectronics and RF Microwave applications , in ...
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5*10.5mm2 M-face Un-doped n-type free-standing GaN single crystal substrate Resistivity < 0.1 Ω·cm Power device/laser wafer Overview GaN substrate has a damage-free, very flat (Rms ...
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5*10.5mm2 M Face Free-Standing GaN Substrates Thickness 350 ±25 µm 5*10.5mm2 M-face Un-doped SI-type free-standing GaN single crystal substrate Resistivity > 106 Ω·cm RF devices ...
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6inch 4H-SiC substrate N-Type D Grade 350.0±25.0μm MPD≤5/cm2 Resistivity 0.014Ω•cm—0.028Ω•cm for power and microwave devices Overview Silicon Carbide (SiC) is a covalent network ...
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